Results 81 to 90 of about 2,935,028 (286)

Spin Transfer Torque in a Graphene Lateral Spin Valve Assisted by an External Magnetic Field

, 2016
Spin-based devices are widely discussed for post-complementary metal–oxide–semiconductor (CMOS) applications. A number of spin device ideas propose using spin current to carry information coherently through a spin channel and transfering it to an output ...
Vinh Quang Diep (1886095), Zhihong Chen (38223), Joerg Appenzeller (1475506), Ashish Verma Penumatcha (1886101), Chia-Ching Lin (369358), Yunfei Gao (1886098)   +5 more
core   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Resistance to Overdoping Allows Over 2000 S cm−1 Conductivity in P(g3BTTT) With Anion‐Exchange Doping

Advanced Materials, EarlyView.
Anion‐exchange doping of conjugated polymers is an effective way to achieve high conductivities. Here, we report over 2000 S cm−1 electrical conductivity for doped P(g3BTTT). In addition, we show that P(g3BTTT) sustains exceptionally high doping levels without any drop in the charge mobility.
Basil Hunger, Maximilian M. Horn, Eva Röck, Diego Rosas Villalva, Lize Bynens, Jochen Vanderspikken, Christina Kousseff, Silène Gobeil, Olivier Bardagot, Nesibe Akmanşen‐Kalayci, Sarah H. Tolbert, Iain McCulloch, Wouter Maes, Demetra Tsokkou, Natalie Banerji   +14 more
wiley   +1 more source

Research Update: Spin transfer torques in permalloy on monolayer MoS2

APL Materials, 2016
We observe current induced spin transfer torque resonance in permalloy (Py) grown on monolayer MoS2. By passing rf current through the Py/MoS2 bilayer, field-like and damping-like torques are induced which excite the ferromagnetic resonance of Py.
Wei Zhang, Joseph Sklenar, Bo Hsu, Wanjun Jiang, Matthias B. Jungfleisch, Jiao Xiao, Frank Y. Fradin, Yaohua Liu, John E. Pearson, John B. Ketterson, Zheng Yang, Axel Hoffmann   +11 more
doaj   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

Advanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena, J. Terence Blaskovits, Kun‐Han Lin, Denis Andrienko   +3 more
wiley   +1 more source

Resonant Domain Wall Dynamics in a Three‐Dimensional Magnetic Nano Double Helix

Advanced Materials, EarlyView.
3D magnetic nanostructures promise exciting possibilities for magnetization dynamics. However, experimental realizations remain scarce. In nanoprinted cobalt double helices, time‐resolved X‐ray microscopy reveals harmonic domain wall dynamics. Simulations identify the mode and additional higher‐frequency resonances, revealing a rich dynamic landscape ...
Pamela Morales‐Fernández, Iason Konstantinos‐Douveas, Claas Abert, Elina Zhakina, Sandra Ruiz‐Gómez, Claudia Fernández‐González, Luke Alexander Turnbull, Sebastian Wintz, Markus König, Simone Finizio, Markus Weigand, Naëmi Leo, Dieter Suess, Aurelio Hierro‐Rodríguez, Amalio Fernández‐Pacheco, Claire Donnelly   +15 more
wiley   +1 more source

Valley controlled spin-transfer torque in ferromagnetic graphene junctions

New Journal of Physics, 2018
The presence of the valley degree of freedom in graphene leads to the valleytronics, in which information is encoded by the valley quantum number of the electron.
Zhi Ping Niu
doaj   +1 more source

Weak In‐Plane Ferromagnetism and Electronic Nematicity in the Distorted Triple‐Q Magnetic Phase of Co1/3TaS2

Advanced Materials, EarlyView.
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi, Woonghee Cho, Pyeongjae Park, Woun Kang, Je‐Geun Park, Younjung Jo   +5 more
wiley   +1 more source

Spintronics and magnetic memory devices

Advances in Physics: X
Spintronics technology enables electrical reading and writing of magnetization orders, thus have led to development of magnetic random access memory (MRAM).
Gyung-Min Choi, OukJae Lee, Sunjae Chung, Woojin Kim, Taeyoung Lee, Byong-Guk Park, Seungmo Yang   +6 more
doaj   +1 more source

Controllable spin-transfer torque on an antiferromagnet in a dual spin-valve [PDF]

, 2011
We consider current-induced spin-transfer torque on an antiferromagnet (AFM) in a dual spin-valve setup. It is demonstrated that a net magnetization may be induced in the AFM by partially or completely aligning the sublattice magnetizations via a current-
Linder, Jacob, Jacob Linder
core   +1 more source