Results 71 to 80 of about 25,528 (285)

Interface Charge Induced Multifunctional Manipulations in Metals. [PDF]

Adv Sci (Weinh)
Voltage‑controlled interface charge enables giant, reversible modulation of magnetic anisotropy, magnetization, and resistivity in common metals. Space‑separated ions and electrons accumulate at interfaces, producing strong interfacial capacitor effect and high‑density electrons injection.
Cao Q, Li Y, Liu S, Han Z, Liu W, Li Z, Tian Y, Ye X, Li S, Li Q, Yan S.   +10 more
europepmc   +2 more sources

Evidence for Itinerant Ferromagnetic Flat Bands Producing Large Transverse Responses

Advanced Materials, EarlyView.
Itinerant ferromagnetic flat bands are demonstrated in GdCo5 with a high Curie temperature of 940K, a stacked honeycomb–kagome lattice, through angle‐resolved photoemission spectroscopy and magneto‐thermoelectric measurements. These topological flat bands generate large Berry curvaturte, producing gigantic anomalous Nernst effect with record‐high ...
Susumu Minami, Yangming Wang, Seigo Souma, Hiroto Nakamura, Akito Sakai, Takumi Osumi, Hang Su, Hikaru Watanabe, Shun'ichiro Kurosawa, Rikuto Oiwa, Daisuke Nishio‐Hamane, Kosuke Nakayama, Takuya Nomoto, Ryotaro Arita, Takafumi Sato, Satoru Nakatsuji   +15 more
wiley   +1 more source

Enhanced OER Performance and Dynamic Transition of Surface Reconstruction in LaNiO3 Thin Films with Nanoparticles Decoration

Advanced Science, 2023
In an electrocatalytic process, the cognition of the active phase in a catalyst has been regarded as one of the most vital issues, which not only boosts the fundamental understanding of the reaction procedure but also guides the engineering and design ...
Huan Liu, Rongrong Xie, Qixiang Wang, Jiale Han, Yue Han, Jie Wang, Hong Fang, Ji Qi, Meng Ding, Weixiao Ji, Bin He, Weiming Lü   +11 more
doaj   +1 more source

Orbital Magnetic Moment Controlled Converse Magnetoelectric Effect in bcc-Co₃Mn/Fe/V/PMN-PT Multiferroic Heterostructures. [PDF]

Adv Sci (Weinh)
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Usami T, Murakami Y, Watarai R, Shiratsuchi Y, Gohda Y, Hamaya K.   +5 more
europepmc   +2 more sources

Spintronics with multiferroics

Journal of Physics: Condensed Matter, 2008
In this paper, we review the recent research on the functionalization of multiferroics for spintronics applications. We focus more particularly on antiferromagnetic and ferroelectric BiFeO3 and its integration in several types of architectures.
Bea, H., Gajek, M., Bibes, M., Barthelemy, A.   +3 more
openaire   +2 more sources

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

Advanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam, William S. Rogers, Chen‐Yu Hu, Ming‐Yuan Song, Xinyu Bao, Shehrin Sayed, Jean Anne C. Incorvia   +6 more
wiley   +1 more source

Van der Waals Heterostructures for Next-Generation Spintronics: Multiferroic-Mediated Magnetoelectric Properties. [PDF]

Adv Sci (Weinh)
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Lee D, Yang J, Oh I, Lee S.
europepmc   +2 more sources

Optimal Control Drives Ultrafast and Energy‐Efficient Magnetization Switching in Van der Waals Magnets

Advanced Materials, EarlyView.
ABSTRACT The accelerating expansion of data‐centric technologies is sharply increasing the energy burden of information storage, placing unprecedented pressure on the efficiency of magnetic switching. Conventional field‐driven reversal, once the foundation of magnetic memory, has become impractical in modern architectures due to its high energy cost ...
Mohammad H. Badarneh, PeiYu Cai, Elton J. G. Santos   +2 more
wiley   +1 more source

Silicon spin diffusion transistor: materials, physics and device characteristics

, 2005
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C, C.V. Tiusan, Gregg, John, S.M. Thompson, Ensell, G, Thompson, SM, Thompson, S M, Gregg, J F, Dennis, CL, Tiusan, CV, Ensell, GJ, Gregg, JF, C.L. Dennis, J.F. Gregg, G.J. Ensell, Dennis, C L   +15 more
core   +2 more sources

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source