Results 61 to 70 of about 25,528 (285)

Machine learning for the development of new materials for a magnetic tunnel junction

open access: yesnpj Spintronics
In materials science, we have been increasing the number of constituent elements in an alloy and compounds to improve their properties. For example, in magnetism and spintronics, ternary alloys, such as NdFeB and CoFeB have been developed and widely used
Atsufumi Hirohata   +6 more
doaj   +1 more source

Ultrafast and terahertz spintronics: Guest editorial [PDF]

open access: yes, 2023
Spin-based electronics (spintronics) aims at extending electronic functionalities, which rely on the electron charge as information carrier, by the spin of the electron.
Mangin, Stéphane   +4 more
core   +1 more source

Electrical Tuning of Ferrimagnetic Spin Alignment Angle and Compensation Temperature in Pt/IrMn3/CoGd Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
Spin‐orbit torque controls the Néel vector of antiferromagnetic IrMn3, which selectively exchange‐couples with spins of Co only in the ferrimagnetic CoGd. This selective interfacial pinning induces the non‐collinear spiral spin configuration, leading to a non‐uniform distribution of local compensation temperature along the film thickness, and enabling ...
Won‐Chang Choi   +8 more
wiley   +1 more source

Interface-to-Surface Transition Induced Topological Hall Effect in 2-Dimensional SrRuO3 Integrated on Silicon

open access: yesResearch
The topological Hall effect (THE), a transport signature emerging from chiral spin textures induced by structural symmetry breaking and the Dzyaloshinskii–Moriya interaction (DMI), represents a rich frontier in condensed matter physics with promising ...
Qinglong Wang   +9 more
doaj   +1 more source

The effect of thermal photons on exceptional points in coupled resonators

open access: yesScientific Reports, 2023
We analyse two quantum systems with hidden parity-time ( $${\mathscr {P}\mathscr {T}}$$ P T ) symmetry: one is an optical device, whereas another is a superconducting microwave-frequency device. To investigate their symmetry, we introduce a damping frame
Grzegorz Chimczak   +4 more
doaj   +1 more source

Accelerated Discovery of Topological Spin Phase Diagrams in CrSBr Magnets Via High‐Throughput Optimization

open access: yesAdvanced Functional Materials, EarlyView.
Here, we develop a high‐throughput algorithm that accelerates the elucidation of phase diagrams of topological spin textures using limited computational resources at high numerical accuracy. Applying this framework to the van der Waals magnet CrSBr, we unveiled a hierarchy of previously unknown topological textures (domain‐wall bimerons, bimeron chains,
Andrew Lyall   +4 more
wiley   +1 more source

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

open access: yesAIP Advances, 2018
Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory.
A. Fukushima   +5 more
doaj   +1 more source

Control of the magnetic domain of Pt/Co/Ru/MgO multilayer: Effect of Co thickness and Ru insertion

open access: yesAIP Advances, 2020
In this study, we investigated the effect of Co film thickness and Ru insertion on the magnetic domain structure of a Pt/Co/Ru/MgO system during the magnetization reversal process.
Tomohiro Nozaki   +5 more
doaj   +1 more source

Spintronics?

open access: yes, 2004
This is a brief review of spin physics in semiconductors, as well as of the historic roots of the recent very active research of spin-related phenomena. The perspectives of "spintronics" are also discussed.
openaire   +3 more sources

Hopping‐Mediated Zero‐Bias Photocharge Retention in Solution‐Processed Van Der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Liquid–liquid interface assembly enables the fabrication of solution‐processed MoS2 and WSe2 centimeter‐scale, nanometer‐thick type‐II heterostructures on paper. Interfacial charge separation and hopping‐limited recombination produce rectification and persistent photocharge retention at zero bias.
Aniello Pelella   +11 more
wiley   +1 more source

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