Results 61 to 70 of about 26,599 (291)

Van der Waals Heterostructures for Next-Generation Spintronics: Multiferroic-Mediated Magnetoelectric Properties. [PDF]

open access: yesAdv Sci (Weinh)
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Lee D, Yang J, Oh I, Lee S.
europepmc   +2 more sources

Dirac Semimetallicity Enabled by Stripe Antiferromagnetism in Monolayer FeSe

open access: yesAdvanced Functional Materials, EarlyView.
In monolayer FeSe, stripe antiferromagnetic order selectively breaks mirror symmetry, enabling odd inter‐orbital hybridization between opposite‐parity Fe 3d states. This mechanism stabilizes symmetry‐protected Dirac nodes with nontrivial Wilson‐loop topology and edge states, accompanied by a strong orbital diamagnetic susceptibility as an experimental ...
Darius‐Alexandru Deaconu   +5 more
wiley   +1 more source

Graphene spintronics: the European Flagship perspective [PDF]

open access: yes, 2015
We review current challenges and perspectives in graphene spintronics, which is one of the most promising directions of innovation, given its room-temperature long-spin lifetimes and the ability of graphene to be easily interfaced with other classes of ...
Guimaraes, M H D   +86 more
core   +1 more source

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv   +15 more
wiley   +1 more source

The effect of thermal photons on exceptional points in coupled resonators

open access: yesScientific Reports, 2023
We analyse two quantum systems with hidden parity-time ( $${\mathscr {P}\mathscr {T}}$$ P T ) symmetry: one is an optical device, whereas another is a superconducting microwave-frequency device. To investigate their symmetry, we introduce a damping frame
Grzegorz Chimczak   +4 more
doaj   +1 more source

Efficient Magnetization Switching Driven by Orbital Torque in Light 3d Transition‐Metal Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
Efficient magnetization switching is demonstrated through orbital torque generated from light 3d transition‐metal nitride. Transition‐metal nitrides are established as effective sources of orbital angular momentum for current‐induced switching, highlighting their potential for low‐power next‐generation orbitronic devices beyond conventional heavy‐metal‐
Gaurav K. Shukla   +3 more
wiley   +1 more source

Control of the magnetic domain of Pt/Co/Ru/MgO multilayer: Effect of Co thickness and Ru insertion

open access: yesAIP Advances, 2020
In this study, we investigated the effect of Co film thickness and Ru insertion on the magnetic domain structure of a Pt/Co/Ru/MgO system during the magnetization reversal process.
Tomohiro Nozaki   +5 more
doaj   +1 more source

Modulation of Surface‐Associated Transport in (Bi1‐xSbx)2Te3 via Battery‐ Inspired Solid‐State Iontronic Gating

open access: yesAdvanced Functional Materials, EarlyView.
Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva   +5 more
wiley   +1 more source

Giant magnetoresistance in perpendicularly magnetized synthetic antiferromagnetic coupling with Ir spacer

open access: yesAIP Advances, 2018
Perpendicularly magnetized magnetic tunnel junction (p-MTJ) is a key element for developing high-density spin-transfer torque switching magnetoresistive random access memory.
A. Fukushima   +5 more
doaj   +1 more source

Boron Nitride Nanotubes for Spintronics [PDF]

open access: yes, 2014
With the end of Moore’s law in sight, researchers are in search of an alternative approach to manipulate information. Spintronics or spin-based electronics, which uses the spin state of electrons to store, process and communicate information, offers ...
Ranjit Pati   +4 more
core   +1 more source

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