Results 261 to 270 of about 211,867 (345)
A solvent‐free, open‐mill shear protocol nucleates 2.6 nm CsPbBr3 QDs uniformly within brominated butyl rubber. The emitters showed 91% PLQY, 1189 ns lifetime, and > 90% retention after 30‐day ambient storage and water immersion, respectively. Board‐to‐board forms 17 × 17 cm2 flexible films for 132% NTSC white LEDs, scintillators, and stretchable ...
Yuxian Su +6 more
wiley +1 more source
2D van der Waals (vdW) materials MM′Te2 with broken symmetry attract great interest for unique magnetic structures and optical‐phonon‐induced phase transitions. We report mechanically exfoliable TaFeTe2 single crystals, exhibiting spin‐glass behavior, intrinsic unsaturated negative magnetoresistance up to 9 T, self‐powered internal photocurrent, and ...
Changcun Li +7 more
wiley +1 more source
Pomeranchuk instability from electronic correlations in CsTi<sub>3</sub>Bi<sub>5</sub> kagome metal. [PDF]
Bigi C +22 more
europepmc +1 more source
Aqueous ammonium‐ion batteries leverage hydrogen‐bond‐mediated NH4+ storage in tunable transition metal compounds. Despite progress in Mn‐, V‐, Mo‐, and W‐based compounds, 2D LDHs, and MXenes, challenges like structural instability and slow kinetics persist. Future advances require robust host design, mechanistic understanding via operando studies, and
Can Li +6 more
wiley +1 more source
Observation of continuous time crystals and quasi-crystals in spin gases. [PDF]
Huang Y +5 more
europepmc +1 more source
The noncentrosymmetric trilayer rhombohedral‐stacked MoS2 nanoflakes with enhanced sliding ferroelectric properties are synthesized via a molecular sieve‐assisted chemical vapor deposition process. The switchable polarization states, combined with the exceptional light/gate voltage modulated electrical properties of these nanoflakes, enable broadband ...
Qichao Xue +11 more
wiley +1 more source
Gate-Tunable Orbital Magnetism and Competing Superconductivity in Twisted Trilayer Graphene Josephson Junctions. [PDF]
Bhardwaj V +10 more
europepmc +1 more source
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source
Statistical control of relaxation and synchronization in open anyonic systems. [PDF]
Bittner ER, Tyagi B.
europepmc +1 more source

