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Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)
Applied Physics Letters, 2001Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO3 homoepitaxy on SrTiO3(001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO3 monolayer may take a much longer time to complete than the
X. D. Zhu +3 more
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Tuning the carrier density in SrTiO3/LaTiO3/SrTiO3 quantum wells
Applied Physics Letters, 2020We discuss methods of built-in carrier density control in SrTiO3/LaTiO3/SrTiO3 heterostructures that exhibit quasi-two-dimensional carrier confinement in an interfacial quantum well. Unlike the electronically similar LaAlO3/SrTiO3 heterostructures, where the polar discontinuity at the interface defines the accumulated carrier density, the LaTiO3 ...
J. N. Lee +3 more
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Journal of The Electrochemical Society, 1981
The defect chemistry of polycrystalline has been studied by means of the equilibrium electrical conductivity as a function of temperature, oxygen activity, Sr/Ti ratio, and impurity additions. Reduction, excess , and acceptor impurities all contribute to the oxygen vacancy content and their effects are therefore highly interdependent.
N. ‐H. Chan, R. K. Sharma, D. M. Smyth
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The defect chemistry of polycrystalline has been studied by means of the equilibrium electrical conductivity as a function of temperature, oxygen activity, Sr/Ti ratio, and impurity additions. Reduction, excess , and acceptor impurities all contribute to the oxygen vacancy content and their effects are therefore highly interdependent.
N. ‐H. Chan, R. K. Sharma, D. M. Smyth
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Materials Research Bulletin, 2015
Abstract The effect of Al 2 O 3 insertion on the electrical properties of SrTiO 3 films is systemically investigated in metal–insulator–metal (MIM) capacitor because SrTiO 3 films with a high dielectric constant generally suffer from high leakage current problem caused by grain boundaries and a narrow band gap.
Ji-Hoon Ahn +3 more
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Abstract The effect of Al 2 O 3 insertion on the electrical properties of SrTiO 3 films is systemically investigated in metal–insulator–metal (MIM) capacitor because SrTiO 3 films with a high dielectric constant generally suffer from high leakage current problem caused by grain boundaries and a narrow band gap.
Ji-Hoon Ahn +3 more
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2021
The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be decomposed in HF:water solution.
Plaza, Alejandro Enrique +4 more
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The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be decomposed in HF:water solution.
Plaza, Alejandro Enrique +4 more
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On superconductivity in SrTiO3
Solid State Communications, 1968Abstract The behaviour of Tc (n) for SrTiO3 is calculated by a model proposed by Appel.2 The Eliashberg gap equations are solved numerically for ...
W. Klose, H. Schuster
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Dielectric investigations of solid solutions SrTiO3-KTaO3 and SrTiO3-KNbO3
Physics of the Solid State, 2014The temperature dependences of the dielectric constant and dielectric hysteresis loops in ceramic samples of (1 − x)SrTiO3−x KNbO3 and (1 − x)SrTiO3−x KTaO3 (0 ≤ x ≤ 0.3) solid solutions prepared using different heat treatments have been investigated. Phase diagrams of the studied solid solutions have been constructed in
P. A. Markovin +4 more
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Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3
Applied Physics Letters, 2011We have demonstrated that the resistance switching (RS) effect can be controlled by the modification of the electrode configurations and the carrier densities in the Ag/SrTiO3 and Ag/Nb-doped SrTiO3(Nb:STO) structures. The elimination of the Schottky junction in the metal/Nb:STO completely destroys the RS effect, which suggests that the RS effect ...
X. G. Chen +7 more
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Abnormal rectifying behavior of In/SrTiO3/SrTiO3 :Nb capacitor
Solid State Communications, 2008Abstract In/SrTiO 3 /SrTiO 3 :Nb capacitors have been fabricated by depositing SrTiO 3 thin film on Nb-1 wt%-doped SrTiO 3 substrate and using In as the top electrode. The current–voltage characteristics were measured and backward rectifying characteristics are found below room temperature.
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Time-resolved photoluminescence in SrTiO3
Journal of Luminescence, 1984SrTiO3 is an insulator with a band gap of 3,27 eV which shows evidence of strong electron-phonon interaction. Its luminescence spectra exhibits a broad band in the visible, apparently intrinsic in nature (1). Its transport properties reveal the existence of deep traps for holes (2) and small polaron behaviour has been observed for electrons in the ...
R. Leonelli, J. L. Brebner
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