Results 271 to 280 of about 50,606 (316)
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On superconductivity in SrTiO3

Solid State Communications, 1968
Abstract The behaviour of Tc (n) for SrTiO3 is calculated by a model proposed by Appel.2 The Eliashberg gap equations are solved numerically for ...
W. Klose, H. Schuster
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The role of etching anisotropy in the fabrication of freestanding oxide microstructures on SrTiO3(001), SrTiO3 (110), and SrTiO3 (111) substrates

2021
The release process for the fabrication of freestanding oxide microstructures relies on appropriate, controllable and repeatable wet etching procedures. SrTiO3 is among the most employed substrates for oxide thin films growth and can be decomposed in HF:water solution.
Plaza, Alejandro Enrique   +4 more
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Dielectric investigations of solid solutions SrTiO3-KTaO3 and SrTiO3-KNbO3

Physics of the Solid State, 2014
The temperature dependences of the dielectric constant and dielectric hysteresis loops in ceramic samples of (1 − x)SrTiO3−x KNbO3 and (1 − x)SrTiO3−x KTaO3 (0 ≤ x ≤ 0.3) solid solutions prepared using different heat treatments have been investigated. Phase diagrams of the studied solid solutions have been constructed in
P. A. Markovin   +4 more
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Comprehensive study of the resistance switching in SrTiO3 and Nb-doped SrTiO3

Applied Physics Letters, 2011
We have demonstrated that the resistance switching (RS) effect can be controlled by the modification of the electrode configurations and the carrier densities in the Ag/SrTiO3 and Ag/Nb-doped SrTiO3(Nb:STO) structures. The elimination of the Schottky junction in the metal/Nb:STO completely destroys the RS effect, which suggests that the RS effect ...
X. G. Chen   +7 more
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Abnormal rectifying behavior of In/SrTiO3/SrTiO3 :Nb capacitor

Solid State Communications, 2008
Abstract In/SrTiO 3 /SrTiO 3 :Nb capacitors have been fabricated by depositing SrTiO 3 thin film on Nb-1 wt%-doped SrTiO 3 substrate and using In as the top electrode. The current–voltage characteristics were measured and backward rectifying characteristics are found below room temperature.
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Time-resolved photoluminescence in SrTiO3

Journal of Luminescence, 1984
SrTiO3 is an insulator with a band gap of 3,27 eV which shows evidence of strong electron-phonon interaction. Its luminescence spectra exhibits a broad band in the visible, apparently intrinsic in nature (1). Its transport properties reveal the existence of deep traps for holes (2) and small polaron behaviour has been observed for electrons in the ...
R. Leonelli, J. L. Brebner
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SrTiO3 glass ceramics

Journal of Materials Science, 1988
The dielectric properties of the strontium titanate aluminosilicate glass-ceramics described in the previous paper have been investigated over the frequency range of 10 to 1000 kHz and temperature range of −170 to 200° C. The dielectric properties were strongly dependent on the crystallization conditions, which determined the amounts of SrTiO3 and ...
S. L. Swartz   +3 more
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SrTiO3 by XPS

Surface Science Spectra, 1992
X-ray photoelectron spectroscopy measurements of the principal core levels, including the energy loss regions, for a SrTiO3(100) single crystal are presented.
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First principle study of SrTiO3 (001) surface and adsorption of NO on SrTiO3 (001)

Applied Surface Science, 2007
Abstract The results of first-principles calculations about the two possible terminations of (0 0 1) surface of SrTiO3 perovskite and adsorption of NO on SrTiO3 (0 0 1) surface were presented. Both surface parameters (atomic structures and electronic configurations) and adsorption parameters (bond, energy and charge) of NO on SrTiO3 (0 0 1) surface ...
H.J. Zhang, G. Chen, Z.H. Li
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Mechanism of superconductivity in SrTiO3

Physica B+C, 1981
Abstract Measurements of the resistivity of Nb-doped SrTiO3 show that the two highest LO modes couple most strongly to the conduction electrons. The conjecture that these polar modes are the dominant ones for superconductivity is confirmed by a remarkable correlation between the carrier-concentration dependence of the corresponding contributions to ...
Alexis Baratoff, Gerd Binnig
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