Results 51 to 60 of about 19,218 (182)

Polarization Dynamics in Ferroelectrics: Insights Enabled by Machine Learning Molecular Dynamics

open access: yesAdvanced Science, EarlyView.
Machine learning molecular dynamics is presented as a route to capture polarization switching, domain wall kinetics, topological polar textures, and polar mechanical coupling beyond the limits of conventional atomistic methods. This Perspective surveys recent progress and identifies key methodological directions, including long‐range electrostatics ...
Dongyu Bai   +3 more
wiley   +1 more source

Wake‐Up and Fatigue under Electrical Cycling in HfO2‐Based Ferroelectrics: Mechanisms and Strategies toward Reliable Devices

open access: yesAdvanced Science, EarlyView.
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim   +6 more
wiley   +1 more source

Partial Phase‐Separation in the Initial Growth Stage of Exsolution‐Active SrTi0.95‐xNi0.05NbxO3‐δ Thin Films

open access: yesAdvanced Science, EarlyView.
Phase separation emerges during the initial growth of heavily Ni‐ and Ni,Nb‐co‐doped STO thin films, leading to preferential accumulation of Ni and embedded NiOx nanoinclusions in thicker films. Nb co‐doping partially suppresses the ordering of these embedded structures, comprising about 20% of all Ni ions.
Yen‐Po Liu   +7 more
wiley   +1 more source

A New Circuit Model for Spin-Torque Oscillator Including Perpendicular Torque of Magnetic Tunnel Junction

open access: yesAdvances in Condensed Matter Physics, 2013
Spin-torque oscillator (STO) is a promising new technology for the future RF oscillators, which is based on the spin-transfer torque (STT) effect in magnetic multilayered nanostructure.
Hyein Lim   +4 more
doaj   +1 more source

Stih što te sustiže

open access: yes[sic], 2017
Sjedili smo na kamenoj klupi šivajući pretpostavke: sad lančić istina sad lančić laži, mogućnost da se međusobno razumijemo i euharistijsku tajnu puti što je tvoja kad mi se udaljuješ. To nam je postalo pukim pitanjem perspektive, bol.
Maria Cabrera i Callís   +1 more
doaj   +1 more source

Flexoelectric Suppression of Interfacial Carrier Loss in BaTiO3 Thin‐Film Bulk Photovoltaic Systems

open access: yesAdvanced Science, EarlyView.
In single‐crystalline BaTiO3 thin films, flexoelectric strain gradients strongly enhance photocurrent by suppressing interfacial carrier loss. Loading experiments reveal a ∼35‐fold photocurrent increase with applied force. Self‐consistent electrostatic modeling shows that strain gradients reshape the interfacial potential landscape, strengthen local ...
Minwoo Jang   +5 more
wiley   +1 more source

Single‐Atom Control of Aromaticity and Excited‐State Dynamics in Endohedral Zirconium–Antimony Zintl Clusters

open access: yesAngewandte Chemie, EarlyView.
Single‐atom growth from [Zr@Sb12]2− to [Zr@Sb13]3− disrupts the closed‐shell S2P6 superatomic configuration and markedly attenuates three‐dimensional (3D) aromaticity. Ultrafast spectroscopy further links stronger spherical aromaticity to slower excited‐state relaxation, establishing an atom‐resolved structure‐aromaticity‐dynamics relationship ...
Yun Zhang   +7 more
wiley   +2 more sources

Sto lat Roczników Historycznych

open access: yesRoczniki Historyczne
Artykuł przynosi zarys historii Roczników Historycznych. Powstały one w 1925 r. w Poznaniu z inicjatywy wybitnego mediewisty, Kazimierza Tymienieckiego, jako czasopismo poświęcone historii ziem zachodnich Polski i stosunkom polsko-niemieckim.
Tomasz Jurek
doaj   +1 more source

Peculiar magnetotransport properties in La0.67Sr0.33MnO3/LaAlO3/SrTiO3

open access: yesAIP Advances, 2019
We have investigated the planar Hall effect (PHE) and the anisotropic magnetoresistance (AMR) in La0.67Sr0.33MnO3/LaAlO3/SrTiO3 (LSMO/LAO/STO) and LSMO/STO structures, where the LSMO (LAO) thickness was 13 unit cells (u.c.) and 18 u.c. (8 u.c. and 6 u.c.)
Michihiko Yamanouchi   +2 more
doaj   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

open access: yesAdvanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho   +6 more
wiley   +1 more source

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