Results 131 to 140 of about 144,488 (176)

Standardized quantum transistor block enables differentiable learning on gait dynamics. [PDF]

Sci Rep
Villalba-Díez J, Ordieres-Meré J.
europepmc   +1 more source

Monomer exchange dynamics in ureido-pyrimidinone supramolecular polymers <i>via</i> molecular simulations.

J Mater Chem B
Cardellini A, Caruso C, Rijns L, Dankers PYW, Pavan GM, Perego C.   +5 more
europepmc   +1 more source

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Stacking numbers for eternal domination

Journal of Combinatorial Mathematics and Combinatorial Computing
In this paper we study a new graph parameter, the stacking number. Defined in relation to the eternal domination game, we show that there are highly connected graphs for which it is beneficial to allow multiple guards to occupy a vertex, answering an open question of Finbow et al.
Penner, Georgia, Williams, Ethan
openaire   +2 more sources

Stacking number dependence of size distribution of vertically stacked InAs/GaAs quantum dots

Journal of Electronic Materials, 1999
Vertically stacked layer structure is useful for controlling the size distribution of quantum dots. The dependence of the size distribution of quantum dots on the stacking numbers is theoretically and experimentally investigated. We show that the size distribution of quantum dots decreases with increasing the stacking number, and it occurs drastically ...
Y. Furukawa, S. Noda, M. Ishii, A. Wakahara, A. Sasaki   +4 more
openaire   +1 more source

Magnetoresistance Properties of Cu/Co/Cu/NiFe Multilayers with a Few Stacking Numbers

Japanese Journal of Applied Physics, 1995
[Cu/Co/Cu/NiFe] N multilayers were prepared using electron-beam evaporation in an ultrahigh vacuum and their magnetoresistive (MR) properties with a few stacking numbers (N) were studied.
Daisuke Miyauchi, Satoru Araki Satoru Araki   +1 more
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Threshold current density and emitting wavelength evolution with stack number in InAs quantum dash lasers at 1.55 μm

2008 20th International Conference on Indium Phosphide and Related Materials, 2008
The authors demonstrate the achievement of InAs quantum dash lasers grown by molecular beam epitaxy (MBE) on InP (100) substrate. The lasers exhibit lasing wavelength at 1.55 µm by multiple stacked dash layers from two to five, with ground state lasing at room temperature.
Zhou, Dayong, Piron, Rozenn, Grillot, Frederic, Dehaese, Olivier, Homeyer, Estelle, Batte, Thomas, Tavernier, Karine, Macé, Erwan, Even, Jacky, Le Corre, Alain, Loualiche, Slimane   +10 more
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