Results 131 to 140 of about 7,510 (291)
RRAM Variability Harvesting for CIM‐Integrated TRNG
Advanced Electronic Materials, EarlyView.This work demonstrates a compute‐in‐memory‐compatible true random number generator that harvests intrinsic cycle‐to‐cycle variability from a 1T1R RRAM array. Parallel entropy extraction enables high‐throughput bit generation without dedicated circuits. This approach achieves NIST‐compliant randomness and low per‐bit energy, offering a scalable hardware
Ankit Bende +4 more
wiley +1 more source
Earth Sciences Research Journal, 2003 <p class="MsoNormal" style="line-height: normal; margin: 0cm 0cm 0pt; mso-layout-grid-align: none;"><span style="font-family: ";Arial";,";sans-serif";; font-size: 12pt; mso-ansi-language: EN-US;" lang="EN-US">An algorithm to solve the inverse
Ortega Galvis Carlos Augusto +1 more
doaj
Advanced Materials InterfacesAlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor ...
Ahmed S. Razeen +8 more
doaj +1 more source
High switching-frequency DC-DC converter IC layout
, 2015 This report pertains to the layout design of building blocks of a high switching-frequency DC-DC converter. The building blocks are an on-chip LC filter (inductor and capacitor), comparator, and an Analog-to-Digital Converter (ADC).
Neo, Yang Yee
core
Monolithic Co‐Integration of Vertical FET and Memristor for 1T1R Cell
Advanced Electronic Materials, EarlyView.This work demonstrates a vertically integrated one‐transistor–one‐memristor (1T1R) cell by stacking a MoS2 vertical field‐effect transistor (VFET) with a mortise–tenon‐shaped (MTS) memristor. This compact architecture not only exhibits highly uniform resistive switching characteristics but also provides a strategy for constructing densely packed ...
Fubo Jiao +15 more
wiley +1 more source
Stack randomization for mitigating (Just-in-time) return oriented programming
, 2017 학위논문(석사) - 한국과학기술원 : 정보보호대학원, 2017.2,[iv, 25 p. :]Return-Oriented Programming (ROP) is considered a highly threatening exploit technique. For mitigating ROP attacks, many researchers have proposed fine-grained Address Space Layout Randomization (ASLR ...
Lee, Seongman
core
Advanced Electronic Materials, EarlyView.This work electrically characterizes sixteen logic gates built from three‐independent‐gate reconfigurable transistors fabricated on full‐scale 300 mm wafers using the industrial 22 nm fully depleted FDSOI process of GlobalFoundries. Static and time‐resolved measurements confirm correct operation, including a 1‐bit adder and reconfigurable AOI/OAI ...
Juan P. Martinez +12 more
wiley +1 more source
Topological Materials and Related Applications
Advanced Electronic Materials, EarlyView.This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti +9 more
wiley +1 more source
Silicon Nitride Resistive Memories
Advanced Electronic Materials, EarlyView.Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis +7 more
wiley +1 more source