Results 71 to 80 of about 109,368 (283)
A 2D heterointerface with a two‐site anchor bridge suppresses nonradiative recombination at the perovskite/C₆₀ interface by reducing surface defects, elevating the Fermi level, and strengthening the electric field. This strategy enables efficient electron extraction, delivering 26.32% efficiency, 1.217 V Voc, excellent operational stability, and broad ...
Chaohui Li +27 more
wiley +1 more source
Design and Fabrication of Full Wheatstone-Bridge-Based Angular GMR Sensors
Since the discovery of the giant magnetoresistive (GMR) effect, GMR sensors have gained much attention in last decades due to their high sensitivity, small size, and low cost.
Shaohua Yan +7 more
doaj +1 more source
A New Embedded Key–Value Store for NVM Device Simulator
The non-volatile memory (NVM) device is a useful way to solve the memory wall in computers. However, the current I/O software stack in operating systems becomes a performance bottleneck for applications based on NVM devices, especially for key–value ...
Tao Cai +5 more
doaj +1 more source
Flexible piezoresistive pressure sensors underpin wearable and soft electronics. This review links sensing physics, including contact resistance modulation, quantum tunneling and percolation, to unified materials/structure design. We highlight composite and graded architectures, interfacial/porous engineering, and microstructured 3D conductive networks
Feng Luo +2 more
wiley +1 more source
Si solar cells with a SiGe graded buffer on top are fabricated as the initial step in GaAsP/Si tandem cell fabrication. Using this structure, the impact of the SiGe buffer layer on the Si solar cells is characterized. To mitigate the impact of the narrow-
Evelina Polyzoeva +3 more
doaj +1 more source
This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Ta/CoFeB/MgO analysis for low power nanomagnetic devices
The requirement of high memory bandwidth for next-generation computing systems moved the attention to the development of devices that can combine storage and logic capabilities.
F. Riente +5 more
doaj +1 more source
CUP: Comprehensive User-Space Protection for C/C++
Memory corruption vulnerabilities in C/C++ applications enable attackers to execute code, change data, and leak information. Current memory sanitizers do no provide comprehensive coverage of a program's data. In particular, existing tools focus primarily
Akritidis Periklis +4 more
core +1 more source
Study of Through-Silicon-Via Impact on the 3-D Stacked IC Layout [PDF]
The technology of through-silicon vias (TSVs) enables fine-grained integration of multiple dies into a single 3-D stack. TSVs occupy significant silicon area due to their sheer size, which has a great effect on the quality of 3-D integrated chips (ICs).
Dae Hyun Kim +2 more
openaire +1 more source
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen +15 more
wiley +1 more source

