Results 151 to 160 of about 2,584,296 (324)

In Situ Regenerative Adduct Assisted p‐Type Doping of Organic Semiconductor

open access: yesAdvanced Materials, EarlyView.
An in situ regenerative adduct‐assisted (IRAA) doping strategy is introduced for p‐type doping of organic semiconductors. A regenerating adduct serves as the dopant, enabling highly efficient doping with a choice of counterions. The generality of this approach provides a scalable route to dope a wide range of hole‐transport materials with high thermal ...
Brijesh K. Patel   +8 more
wiley   +1 more source

Synchronizing Tunable Luminescence and Shape Morphing in a Metal Nanocluster–Enabled Hydrogel Platform

open access: yesAdvanced Materials, EarlyView.
A nanocluster–gel platform is developed to synchronously integrate tunable luminescence and shape morphing under a single stimulus, with emission programmability encoded through cluster size modulation (Au10 → Au18). Solvent‐induced shape–optical transitions are visualized in a lotus‐shaped gel that dynamically folds and dims, enabling rapid (< 5 s ...
Hongbin Lin   +9 more
wiley   +1 more source

Giant Orbital Rashba–Edelstein Effect in Crystalline Cu2O/Cu Heterostructures

open access: yesAdvanced Materials, EarlyView.
An enhanced orbital Rashba–Edelstein effect is demonstrated in a crystalline Cu2O/Cu heterostructure, compared to naturally oxidized CuOx structures, highlighting the critical role of crystallinity and interface control in orbital torque generation. The resulting spin torque conductivity exceeds that of Pt, indicating the potential of orbital torque ...
San Ko   +10 more
wiley   +1 more source

High‐Performance, Paper‐Based Microelectronics via a Micromodular Fabrication Process

open access: yesAdvanced Materials Interfaces, EarlyView.
This study demonstrates high‐performance silicon micromodular transistors on cellulose nanomaterial‐coated paper, with interconnects formed via e‐jet printing. Transistors exhibit excellent electrical properties and maintain performance under applied strain.
Rebecca K. Banner   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Evolution of Materials and Device Stacks for HfO2‐Based Ferroelectric Memories

open access: yesAdvanced Materials Interfaces, EarlyView.
This review summarizes engineering strategies for HfO2 based ferroelectric memories with focus on FeCAP and FeFET structures. It describes how dopant design, stress effects, and interface engineering improve the bulk ferroelectric response. It further discusses how channel engineering supports reliable memory characteristics and scalable integration ...
Eunjin Kim, Jiyong Woo
wiley   +1 more source

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