Results 191 to 200 of about 31,922 (257)

Hybrid Quantum-Classical Algorithm for Robust Optimization via Stochastic-Gradient Online Learning. [PDF]

Quantum Mach Intell
Lim D, Doriguello JF, Rebentrost P.
europepmc   +1 more source

Categorical framework for quantum-resistant zero-trust AI security. [PDF]

Sci Rep
Cherkaoui I, Clarke C, Horgan J, Dey I.
europepmc   +1 more source

Influences of dynamic and static retrieval cues on memory for events. [PDF]

Front Cognit
Smithwick MS, Kersten AW, Darby KP, Earles JL.   +3 more
europepmc   +1 more source

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2D Materials‐Based Static Random‐Access Memory

Advanced Materials, 2022
Abstract2D transition‐metal dichalcogenide semiconductors, such as MoS2 and WSe2, with adequate bandgaps are promising channel materials for ultrascaled logic transistors. This scalability study of 2D material (2DM)‐based field‐effect transistor (FET) and static random‐access memory (SRAM) cells analyzing the impact of layer thickness reveals that the ...
Lain-Jong Li, Yi Wan, Vita Pi-Ho Hu
exaly   +3 more sources

A 128Kb CMOS static random-access memory

IBM Journal of Research and Development, 1991
This paper describes an all-CMOS 128Kb static random-access memory (SRAM) with emitter-coupled-logic (ECL) I/O compatibility which was designed for the air-cooled Enterprise System/9000™ processors. Access time of 6.5 ns is achieved using 0.5-µm channel length and 1.0-µm minimum geometry. Pipelining and self-resetting circuit techniques permit the chip
Jeff L. Chu, Hamid R. Torabi, Fred J. Towler   +2 more
openaire   +1 more source

Testing static and dynamic faults in random access memories

Proceedings 20th IEEE VLSI Test Symposium (VTS 2002), 2003
The ever increasing trend to reduce DPM levels of memories requires tests with very high fault coverage. The important class of dynamic faults, therefore, cannot be ignored any more. It is shown that conventional memory tests constructed to detect static faulty behavior of a specific defect do not necessarily detect the dynamic faulty behavior. Indeed,
Said Hamdioui, Zaid Al-Ars, Ad J. van de Goor   +2 more
openaire   +1 more source

On design of multiple-valued static random-access-memory

Proceedings of the Twentieth International Symposium on Multiple-Valued Logic, 2002
General theories on multiple-valued static random-access memory (RAM) are investigated. The criteria for a stable and an unstable mode are proved with strict mathematical methods and expressed with diagrammatic representation. A circuit design and realization for NMOS six-transistor ternary and quaternary static RAM cells based on the theories are ...
Okihiko Ishizuka, Zheng Tang, Hiroki Matsumoto   +2 more
openaire   +1 more source

High-speed GaAs static random-access memory

IEEE Transactions on Electron Devices, 1982
An 8-bit fully decoded RAM test circuit has been designed and fabricated using enhancement-mode GaAs-MESFET's with the LPFL circuit approach. Correct operation of the circuit has been observed for a supply voltage varying from 3.5 to 7 V. An access time of 0.6 ns was measured for a total power consumption of 85 mW under nominal operating conditions ...
G. Bert, J.-P. Morin, G. Nuzillat, C. Arnodo   +3 more
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Static Random Access Memory Technologies

2009
This chapter contains sections titled: Basic SRAM Architecture and Cell Structures SRAM Selection Considerations High Performance SRAMs Advanced SRAM Architectures Low-Voltage SRAMs BiCMOS Technology SRAMs SOI SRAMs Specialty SRAMs This chapter contains sections titled ...
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Static Response of Three-Dimensional and Printed Complementary Organic TFTs-Based Static Random-Access Memory

IEEE Electron Device Letters, 2022
Sungjune Jung, Woojo Kim
exaly