Results 121 to 130 of about 17,368,081 (283)

DTCO of NOR-Type IGZO FeFETs for 3-D Heterogeneous AI Memories: A Read-Centric Perspective

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
InGaZnO (IGZO)-channel FeFETs have attracted notable interest thanks to recent advances in endurance, opening up their application space for read-dominated AI memory tiers.
Yang Xiang   +10 more
doaj   +1 more source

Stacking magnetic random access memory atop microprocessors: an architecture-level evaluation

open access: yes, 2011
Magnetic random access memory (MRAM) has been considered as a promising memory technology because of its attractive properties such as non-volatility, fast access, zero standby leakage and high density.
Wu, X.   +9 more
core   +1 more source

Advancing Human Skin Equivalents: The Crucial Role of Neurovascular Integration

open access: yesAdvanced Healthcare Materials, EarlyView.
This review discusses the importance of integrating vascular and peripheral nerve systems into human skin equivalents (HSEs) to better recapitulate native skin physiology. Recent advances in vascularized, innervated, and neurovascularized HSEs are highlighted, together with emerging bioengineering strategies, current challenges, and future ...
Hao Wu   +4 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

open access: yesAdvanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long   +26 more
wiley   +1 more source

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

Organic Materials of Tomorrow: Horizons of Artificial Intelligence

open access: yesAdvanced Materials, EarlyView.
This review examines machine learning techniques accelerating the discovery of organic semiconductors by linking molecular structure to properties. Key methods include graph neural networks, generative models, and active learning. Applications to organic photovoltaics demonstrate practical impact.
Harold Mena   +3 more
wiley   +1 more source

Active Supply Control in Static Random Access Memories (Actieve vermogencontrole in Static Random Access Memories)

open access: yes, 2009
The evolution of the cell phone from a "simple" wireless phone to a port able multimedia station is a prime example of the paradigm shift in mode rn day electronics. Applications evolve towards more mobility and more multimedia. This requires an increase in power efficiency of the electronic systems as battery power is limited.
openaire   +1 more source

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

open access: yesAdvanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae   +13 more
wiley   +1 more source

Central processing unit built-in self-test for random access memory test and repair [PDF]

open access: yes, 2002
Digital signal processor integrated circuits dedicate a significant percentage of the die area to embedded static random access memory, and by designing redundant elements into the memory, repairs to the memory as an effective way to increase digital ...
Wrights, Nathan W.
core  

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