Results 101 to 110 of about 17,368,081 (283)

Circuit Implementation, Operation, and Simulation of Multivalued Nonvolatile Static Random Access Memory Using a Resistivity Change Device

Active and Passive Electronic Components, 2013
We proposed and computationally analyzed a multivalued, nonvolatile SRAM using a ReRAM. Two reference resistors and a programmable resistor are connected to the storage nodes of a standard SRAM cell.
Kazuya Nakayama, Akio Kitagawa
doaj   +1 more source

Electrical‐Programming‐Free Neural Crossbars Enabled by Photochemical Weight Patterning

Advanced Functional Materials, EarlyView.
A flexible neural‐crossbar hardware system enabled by electrical‐programming‐free, mask‐defined, array‐parallel photochemical weight patterning is demonstrated. Trained weights are physically implemented across the array, supporting multilevel programming, bending‐stable operation and reconfiguration, substrate reuse, and low‐energy readout while ...
Hyo‐Bin Jang, Ji‐Hoon Choi, Juhyung Seo, Seungwoo Baek, Hocheon Yoo, Hea‐Lim Park   +5 more
wiley   +1 more source

Accelerated Discovery of Topological Spin Phase Diagrams in CrSBr Magnets Via High‐Throughput Optimization

Advanced Functional Materials, EarlyView.
Here, we develop a high‐throughput algorithm that accelerates the elucidation of phase diagrams of topological spin textures using limited computational resources at high numerical accuracy. Applying this framework to the van der Waals magnet CrSBr, we unveiled a hierarchy of previously unknown topological textures (domain‐wall bimerons, bimeron chains,
Andrew Lyall, Mohammad H. Badarneh, Cristian Bonato, Rebecca Cheung, Elton J. G. Santos   +4 more
wiley   +1 more source

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

Advanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma, Paolo De Vincenzi, Nadine Denis, Francesca Santangeli, Riccardo Pallucchi, Harikrishnan Gopalakrishnan, Elena Blundo, Antonio Polimeni, Marco Felici, Fumitaro Ishikawa, Marta De Luca   +10 more
wiley   +1 more source

Gallium arsenide dynamic random access memory support circuitry [PDF]

, 1993
This thesis presents the design and layout of a Gallium Arsenide (GaAs) Dynamic Random Access Memory (DRAM array of eight four-bit words including refresh circuitry.
Morris, Michael Andrew
core   +2 more sources

S²RAM: Optimization of SRAM With Memory Access Patterns

IEEE Access
This paper presents a static sequential-random-access memory (S2RAM) designed to enable low-power and high-performance operations for workloads involving sequential memory accesses.
Woong Choi
doaj   +1 more source

Magneto‐Ionic Devices With Polymer‐Based Electrolytes

Advanced Functional Materials, EarlyView.
Polymer electrolytes are introduced for magneto‐ionic devices based on hydroxide and hydrogen ions. The magneto‐ionic effect results in a pronounced voltage‐controlled variation of coercivity in both devices. The switching speed is in the range of 100 ms.
Markus Gößler, Richard Weber, Michael Sommer, Karin Leistner   +3 more
wiley   +1 more source

Nitrospinics: Nitride Materials for Spin‐Orbit and Orbital Torques From Memory to Artificial Intelligence

Advanced Functional Materials, EarlyView.
Further advances in applications can be anticipated through the development of unique and functional materials beyond conventional alloys. Nitrogen enables tailor‐made orbital textures in various transition‐metal hosts, paving the way for devices ranging from spintronics memory to artificial intelligence hardware.
Prabhat Kumar, Gaurav Kumar Shukla, Yoshio Miura, Shinji Isogami   +3 more
wiley   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source