Results 81 to 90 of about 17,368,081 (283)

Firmware Attestation in IoT Swarms Using Relational Graph Neural Networks and Static Random Access Memory

open access: yesAI
The proliferation of Internet of Things (IoT) swarms—comprising billions of low-end interconnected embedded devices—has transformed industrial automation, smart homes, and agriculture.
Abdelkabir Rouagubi   +2 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Energy-Efficient Architecture for Wireless Sensor Networks in Healthcare Applications

open access: yesIEEE Access, 2018
The need to deploy wireless sensor networks (WSNs) for real-world applications, such as mobile multimedia for healthcare organizations, is increasing spectacularly.
Nayif Saleh   +2 more
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

A FerroFET-Based In-Memory Processor for Solving Distributed and Iterative Optimizations via Least-Squares Method

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
In recent years, several designs that use in-memory processing to accelerate machine-learning inference problems have been proposed. Such designs are also a perfect fit for discrete, dynamic, and distributed systems that can solve large-dimensional ...
Insik Yoon   +11 more
doaj   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

open access: yesAdvanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas   +6 more
wiley   +1 more source

URcon: Unified and Reconfigurable Control and Verification Platform for Multi-Mode Customized eDRAM and SRAM Macros

open access: yesIEEE Access
With the rapid development of various technologies, processing large amounts of data has become essential. To address this trend, various high-density and high-performance memories have emerged.
Ho-Sung Lee   +4 more
doaj   +1 more source

DESIGN AND ANALYSIS OF STATIC RANDOM ACCESS MEMORY BY SCHMITT TRIGGER TOPOLOGY FOR LOW VOLTAGE APPLICATIONS [PDF]

open access: yesJournal of Engineering Science and Technology, 2016
Aggressive scaling of transistor dimensions with each technology generation has resulted an increased integration density and improved device performance at the expense of increased leakage current.
RUKKUMANI V., DEVARAJAN N.
doaj  

Statis random access memory with symmetric leakage-compensated bit line

open access: yes, 2004
An eight-cell for static random access memory, the memory cell comprising cross-coupled inverters to store the information bit, two access nMOSFETs connected to local bit lines to access the stored information bit, and two nMOSFETs each having a gate ...
Hsu, Steven K.,   +4 more
core  

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