Results 61 to 70 of about 26,207 (255)

Firmware Attestation in IoT Swarms Using Relational Graph Neural Networks and Static Random Access Memory

AI
The proliferation of Internet of Things (IoT) swarms—comprising billions of low-end interconnected embedded devices—has transformed industrial automation, smart homes, and agriculture.
Abdelkabir Rouagubi, Chaymae El Youssofi, Khalid Chougdali   +2 more
doaj   +1 more source

Stability Improvement of an Efficient Graphene Nanoribbon Field-Effect Transistor-Based SRAM Design

Journal of Nanotechnology, 2020
The development of the nanoelectronics semiconductor devices leads to the shrinking of transistors channel into nanometer dimension. However, there are obstacles that appear with downscaling of the transistors primarily various short-channel effects ...
Mathan Natarajamoorthy, Jayashri Subbiah, Nurul Ezaila Alias, Michael Loong Peng Tan   +3 more
doaj   +1 more source

Designing Polymer Nanocomposites for X‐Ray Shielding: Mechanisms, Architectures, and Scalable Processing

Advanced Engineering Materials, EarlyView.
This review highlights advances in lightweight, lead‐free polymer nanocomposites for diagnostic X‐ray shielding. By linking filler chemistry, dispersion, architecture, and photon interaction mechanisms, it establishes structure–performance relationships guiding material design.
Aklilu G. Messele, Hossein Ipakchi, Tizazu H. Mekonnen   +2 more
wiley   +1 more source

Energy-Efficient Architecture for Wireless Sensor Networks in Healthcare Applications

IEEE Access, 2018
The need to deploy wireless sensor networks (WSNs) for real-world applications, such as mobile multimedia for healthcare organizations, is increasing spectacularly.
Nayif Saleh, Abdallah Kassem, Ali M. Haidar   +2 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

A FerroFET-Based In-Memory Processor for Solving Distributed and Iterative Optimizations via Least-Squares Method

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
In recent years, several designs that use in-memory processing to accelerate machine-learning inference problems have been proposed. Such designs are also a perfect fit for discrete, dynamic, and distributed systems that can solve large-dimensional ...
Insik Yoon, Muya Chang, Kai Ni, Matthew Jerry, Samantak Gangopadhyay, Gus Henry Smith, Tomer Hamam, Justin Romberg, Vijaykrishnan Narayanan, Asif Khan, Suman Datta, Arijit Raychowdhury   +11 more
doaj   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

Combined physical unclonable function circuit implementation for generation true random number sequences

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The possibility of using two physical unclonable functions (based on static random access memory and on the ring oscillators) to produce true random number sequences was investigated.
S. S. Zalivako, A. A. Ivaniuk
doaj