Results 71 to 80 of about 26,207 (255)

Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film

Advanced Functional Materials, EarlyView.
ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu, Xiangwei Guo, Sajid Husain, Maya Ramesh, Pushpendra Gupta, Darrell Schlom, Ramamoorthy Ramesh, Yu‐Tsun Shao   +7 more
wiley   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

DESIGN AND ANALYSIS OF STATIC RANDOM ACCESS MEMORY BY SCHMITT TRIGGER TOPOLOGY FOR LOW VOLTAGE APPLICATIONS [PDF]

Journal of Engineering Science and Technology, 2016
Aggressive scaling of transistor dimensions with each technology generation has resulted an increased integration density and improved device performance at the expense of increased leakage current.
RUKKUMANI V., DEVARAJAN N.
doaj  

Transfer Printing and Reconfiguration of Soft Electronics Using Digital Microfluidics and Laser Machining

Advanced Functional Materials, EarlyView.
This paper presents a digital microfluidics‐based technique for transferring and reconfiguring soft nanomembranes. Laser‐machined nanothin membranes are picked up, transported, and aligned via tailored surface tension and the actuation of water droplets, enabling the development of flexible electronics, the integration of functional materials on 3D ...
Quang Anh Nguyen, Chi Cong Nguyen, Tran Bach Dang, Phuoc Thien Phan, Jordan Thorpe, Michael Listyawan, Nhat Minh Doan, Sinuo Zhao, Hongru Chen, Trung Thien Hoang, Mingsheng Xu, Jisheng Han, Thanh Nho Do, Adam Hill, Timothée Mouterde, Hoang‐Phuong Phan   +15 more
wiley   +1 more source

URcon: Unified and Reconfigurable Control and Verification Platform for Multi-Mode Customized eDRAM and SRAM Macros

IEEE Access
With the rapid development of various technologies, processing large amounts of data has become essential. To address this trend, various high-density and high-performance memories have emerged.
Ho-Sung Lee, Ik-Hyeon Jeon, Jiwon Lee, Hyeonjun Cheon, Joo-Hyung Chae   +4 more
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Radiation tolerant capacitor-SRAM without area overhead

Nuclear Engineering and Technology
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells
Eunju Jo, Hosang Yoon, Hongjoon Park, Woo-young Choi, Inyong Kwon   +4 more
doaj   +1 more source

Single Event Upset Study of 22 nm Fully Depleted Silicon-on-Insulator Static Random Access Memory with Charge Sharing Effect. [PDF]

Micromachines (Basel), 2023
Yin C, Gao T, Wei H, Chen Y, Liu H.
europepmc   +1 more source

Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse

Advanced Functional Materials, EarlyView.
Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee, Jinbo Kim, Myeongjin An, Jisoo Park, Junho Sung, Eunsung Hwang, Suhwan Seok, Seong‐Min Bak, Jeonghun Kim, Eunho Lee   +9 more
wiley   +1 more source

Oxidized MoS2‐Based Multifunctional Memristive Hardware for Energy‐Efficient mmWave Signal Processing and In‐Memory Matrix Multiplication

Advanced Functional Materials, EarlyView.
Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son, Changwoo Pyo, Sungmoon Park, Yoongi Cho, Seungchan Lee, Myungsoo Kim   +5 more
wiley   +1 more source