Results 91 to 100 of about 17,368,081 (283)

Nonvolatile Magnetoresistive Random-Access Memory Based on Magnetic Tunnel Junctions

, 2004
Magnetoresistive random-access memory (MRAM) is a new memory technology that is nearing commercialization. MRAM integrates a magnetic tunnel junction (MTJ) device with standard silicon-based microelectronics, resulting in a combination of qualities not ...
J.J. Sun, B.N. Engel, G. Grynkewich, S. Tehrani, N.D. Rizzo, J. Janesky, B. Butcher, K. Smith, S. Pietambaram, J.M. Slaughter, M. Durlam, J. Åkerman, M. DeHerrera, P. Brown, R.W. Dave   +14 more
core   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Combined physical unclonable function circuit implementation for generation true random number sequences

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The possibility of using two physical unclonable functions (based on static random access memory and on the ring oscillators) to produce true random number sequences was investigated.
S. S. Zalivako, A. A. Ivaniuk
doaj  

A fast half-subtractor using 8T static random access memory for in-memory computation [PDF]

The existing system for computation completely incorporates Von-Neumann architecture which has limitations with respect to its memory, parallelism and power constraints. This has affected the efficiency of the computing system.
Shylashree, Nagaraja, Hemaraj, Sheetal Singrihalli, Prabhakar, Deepika, Narasimhaiah, Sunitha Yariyur, Mariswamappa, Yashaswini Biligere   +4 more
core   +1 more source

Multimodal Optoelectronic Synapses for Neuromorphic Intelligence: Coupling Light, Electrical, Thermal, and Beyond

Advanced Functional Materials, EarlyView.
This review revisits optoelectronic neuromorphic devices that extend from unimodal sensing toward multimodal perception. Five types of stimuli‐to‐output information flow that are classified based on the device roles within the system and applications are summarized and discussed.
Jihyun Shin, Junhyung Cho, Wangmyung Choi, Jaehyun Hur, Jae Kyeong Jeong, Ulrike Kraft, Hocheon Yoo   +6 more
wiley   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Radiation tolerant capacitor-SRAM without area overhead

Nuclear Engineering and Technology
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM cells
Eunju Jo, Hosang Yoon, Hongjoon Park, Woo-young Choi, Inyong Kwon   +4 more
doaj   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Upcycling Keratin‐Based Textile Waste Into High‐Performance Hybrid Fibers Via Tuning the Interfacial Interactions

Advanced Functional Materials, EarlyView.
Keratin recovered from animal‐hair textile waste is fractionated and blended with cellulose to produce continuously spun hybrid fibers. Selecting the high‐molecular‐weight keratin fraction enables 30 wt.% keratin incorporation while maintaining high strength in dry and wet states.
Mian Zhai, Daniel Van Opdenbosch, Inge Schlapp‐Hackl, Teemu Välisalmi, Markus Linder, Michael Hummel, Wenwen Fang   +6 more
wiley   +1 more source