Results 131 to 140 of about 13,303,652 (245)

Comparison of two methods for probabilistic finite element analysis of total knee replacement

open access: yes, 2008
Probabilistic Finite Element (FE) models have recently been developed to assess the impact of experimental variability present in knee wear simulator on predicted Total Knee Replacement (TKR) mechanics by determining the performance envelope of joint ...
Arsene, C.T.C.   +3 more
core   +1 more source

Optically Tunable Threshold Switching and Thermally Activated Transport in Planar Ag/MAPbI3 Thin Single‐Crystal Devices

open access: yesAdvanced Science, EarlyView.
Planar Ag/MAPbI3 thin single‐crystal halide perovskite devices show ultralow dark current and optically tunable threshold switching. Illumination enhances the polarity‐dependent hysteresis and shifts the switching voltage, whereas temperature‐dependent measurements reveal thermally activated, contact‐limited transport, underscoring the central role of ...
Ofelia Durante   +16 more
wiley   +1 more source

On numerical issues for the wave/finite element method

open access: yes, 2006
The waveguide finite element (WFE) method is a numerical method to investigate wave motion in a uniform waveguide. Numerical issues for the WFE method are specifically illustrated in this report.
Waki, Y., Brennan, M.J., Mace, B.R.
core   +1 more source

Neuromorphic Devices and Computing for Sensing, Memory, and Control

open access: yesAdvanced Science, EarlyView.
This review introduces neuromorphic devices made from diverse materials. These devices mimic neuronal functions and architectures and, when integrated with artificial or biological computing, can form closed loops with neurons for pressure, optical, acoustic, and biochemical sensing and modulation.
Zhengguang Zhu   +2 more
wiley   +1 more source

Inverse Design of Pre‐Strain via a Predictive Electromechanical Model for Enhanced Strain Sensing

open access: yesAdvanced Science, EarlyView.
An analytical electromechanical model rooted in microcrack evolution mechanics is globally calibrated from only eight pre‐strain datasets, enabling prediction of the complete sensing response at untested pre‐strain values within the calibrated design space (R2 > 0.99).
Jia‐Chen Shang   +10 more
wiley   +1 more source

Revealing the Underlying Mechanisms in Performance Enhancement of Shellular Lattice Electrodes During Anion Exchange Membrane Water Electrolysis Process

open access: yesAdvanced Science, EarlyView.
Micro laser powder bed fusion enables architected nickel shellular lattice gas diffusion layers for anion exchange membrane water electrolysis. Among regular open cell geometries, the Gyroid lattice promotes bubble release, convective reactant replenishment and continuous electron transport, delivering low overpotentials, enhanced charge transfer and ...
Tianxiao Niu   +7 more
wiley   +1 more source

From Sensing Mechanisms to System Co‐Design: Graphene‐Based Sensors and Readout Circuits

open access: yesAdvanced Science, EarlyView.
This review establishes a unified PS–EQ–RF framework linking graphene sensing mechanisms, native electrical outputs, and output‐specific readout circuits. Voltage‐, current‐, resistance‐, and capacitance‐type sensing systems are systematically classified to guide architecture selection, low‐noise design, system co‐design, and practical integration ...
Jinduo Zhang   +5 more
wiley   +1 more source

Disorder Driven Anisotropic Nonlinear Hall Effect in the Kagome Metal YbCo6Ge6 at Room Temperature

open access: yesAdvanced Science, EarlyView.
The intrinsic structural disorder and short‐range correlated motifs in the kagome metal YbCo6Ge6 constitute the primary mechanism for a robust and anisotropic nonlinear Hall effect (NLHE). This effect is sustained across a wide temperature range, achieving a nonlinear responsivity of up to ∼4.5 × 10−3 m/V at 70 K, higher than known disordered and ...
Qurat Ul Ain   +11 more
wiley   +1 more source

Probabilistic Computing via Gate‐Tunable Random Telegraph Noise

open access: yesAdvanced Science, EarlyView.
Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Gyungwon Yun   +8 more
wiley   +1 more source

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