Results 81 to 90 of about 26,100 (268)

Operators of stochastic differentiation on spaces of nonregular generalized functions of Levy white noise analysis

Karpatsʹkì Matematičnì Publìkacìï, 2016
The operators of stochastic differentiation, which are closely related with the extended Skorohod stochastic integral and with the Hida stochastic derivative, play an important role in the classical (Gaussian) white noise analysis.
N.A. Kachanovsky
doaj   +1 more source

Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias

Advanced Engineering Materials, EarlyView.
Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb, S. Rahman Pejman, Alexander Jakimowicz, Jonathan P. Singer   +3 more
wiley   +1 more source

Optimized stochastic approach for integral equations [PDF]

Annals of computer science and information systems, 2021
Venelin Todorov, Ivan Dimov, Stefka Fidanova, Rayna Georgieva   +3 more
doaj   +1 more source

An Optimal Control Problem of Forward-Backward Stochastic Volterra Integral Equations with State Constraints

Abstract and Applied Analysis, 2014
This paper is devoted to the stochastic optimal control problems for systems governed by forward-backward stochastic Volterra integral equations (FBSVIEs, for short) with state constraints.
Qingmeng Wei, Xinling Xiao
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Triangular Function Method is Adopted to Solve Nonlinear Stochastic It o^–Volterra Integral Equations

Discrete Dynamics in Nature and Society
This article presents the numerical solutions of nonlinear stochastic It o^–Volterra integral equations by using the basis function method under the global Lipschitz condition.
Guo Jiang, Dan Chen, Fugang Liu
doaj   +1 more source

SPDIEs and BSDEs Driven by Lévy Processes and Countable Brownian Motions

Journal of Function Spaces, 2016
The paper is devoted to solving a new class of backward stochastic differential equations driven by Lévy process and countable Brownian motions. We prove the existence and uniqueness of the solutions to the backward stochastic differential equations by ...
Pengju Duan
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

Advanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan, Rahul Gupta, Reshma Peremadathil Pradeep, Fabian Kammerbauer, Iryna Kononenko, Klemens Prügl, Michael Kirsch, Bernd Aichner, Santiago Helbig, Florian Bruckner, Claas Abert, Andrada Oana Mandru, Armin Satz, Gerhard Jakob, Hans Josef Hug, Mathias Kläui, Dieter Suess   +16 more
wiley   +1 more source