Results 181 to 190 of about 10,118 (268)

Passivation‐Induced Species Dynamics and Microstructural Evolution in Solid‐State Lithium–Sulfur Cathodes

Advanced Science, EarlyView.
The formation of insulating Li2S during discharge in solid‐state lithium–sulfur batteries passivate reaction sites and limits sulfur utilization. In this work, a microstructure‐resolved modeling framework coupling transport and reaction kinetics is developed to predict charge–discharge behavior and reveal particle‐scale species evolution and incomplete
Arpan K. Sharma, Bairav S. Vishnugopi, Elif Pınar Alsaç, Matthew T. McDowell, Partha P. Mukherjee   +4 more
wiley   +1 more source

The KPZ Equation of Kinetic Interface Roughening: A Variational Perspective. [PDF]

Entropy (Basel)
Wio HS, Deza RR, Revelli JA, Gallego R, García-García R, Rodríguez MA.   +5 more
europepmc   +1 more source

Mechanical Strain‐Programmed SDC1+ Sheath Fibroblasts Trigger CXCR4hi Neutrophil‐Mediated Enthesitis in Ankylosing Spondylitis

Advanced Science, EarlyView.
In ankylosing spondylitis (AS), mechanical strain‐programmed SDC1+ sheath fibroblasts secrete CXCL5 to recruit neutrophils and promote the activation of CXCR4hi neutrophils, thereby exacerbating enthesitis by promoting neutrophil extracellular traps (NETs) formation. SOX5 controls the generation of SDC1+ sheath fibroblasts via super‐enhancers.
Jiajie Lin, Zepeng Su, Yipeng Zeng, Yi Zhou, Chenying Zeng, Weihao Zhang, Qibo Li, Zipeng Xiao, Zibin Chen, Ziqian Liu, Yangfeng Lin, Guan Zheng, Wenhui Yu, Zhongyu Xie   +13 more
wiley   +1 more source

An Implantable Scaffold Sequentially Releasing STING Agonist and B7‐H3 Antibody for Bone Metastasis Immunotherapy

Advanced Science, EarlyView.
We developed an implantable dual‐drug depot using GelMA for bone metastasis treatment, co‐delivering MSA‐2 and αB7‐H3‐loaded CaCO3 microparticles. Sustained release from GelMA scaffold enables MSA‐2 to activate STING signaling and enhance T‐cell infiltration and activation, while sequentially released αB7‐H3 blocks MSA‐2‐induced B7‐H3 upregulation ...
Qijun Lin, Hong Xiao, Shuai Fan, Kaimin Cai, Yanteng Xu, Xinwen Wang, Guanhong Chen, Chuandong Lang, Xinsheng Peng, Mingqiang Li, Yuhu Dai   +10 more
wiley   +1 more source

Apparent Pathologies in Stochastic Entropy Production in the Thermalisation of an Open Two-Level Quantum System. [PDF]

Entropy (Basel)
Dexter J, Ford IJ.
europepmc   +1 more source

Spintronic Bayesian Hardware Driven by Stochastic Magnetic Domain Wall Dynamics

Advanced Science, EarlyView.
Magnetic Probabilistic Computing (MPC) utilizes intrinsic stochastic dynamics in domain walls to establish a hardware foundation for uncertainty‐aware artificial intelligence. Thermally driven domain‐wall fluctuations, voltage‐controlled magnetic anisotropy, and TMR readout enable fully electrical, tunable probabilistic inference.
Tianyi Wang, Bingqian Dai, Shijie Xu, Kin Wong, Yaochen Li, Yang Cheng, Qingyuan Shu, Haoran He, Puyang Huang, Hanshen Huang, Xixiang Zhang, Kang L. Wang   +11 more
wiley   +1 more source

Quasistationarity and extinction for population processes under asymptotic reversibility conditions. [PDF]

J Math Biol
Clancy D.
europepmc   +1 more source

Emerging Device Applications From Strong Light–Matter Interactions in 2D Materials

Advanced Science, EarlyView.
Two‐dimensional semiconductors enable extremely compact optoelectronic devices such as solar cells, sensors, LEDs, and lasers. Their strong light–matter interactions allow efficient light emission, detection, and energy conversion. This review article discusses the recent progress in integrating these materials with optical cavities and nanostructures ...
Janani Archana K, Kumar Shwetabh, Reyas Ali, Ramji Velayutham, Koustav Das, Abhishek Mondal, Prashant Kumar, Surendra B. Anantharaman   +7 more
wiley   +1 more source

Pattern Formation in Agent-Based and PDE Models for Evolutionary Games with Payoff-Driven Motion. [PDF]

Bull Math Biol
Yao T, Xu C, Cooney DB.
europepmc   +1 more source

Cation‐Driven Valence Change Mechanism in 2D AgCrS2 for Ultralow‐Power and Reliable Memristors

Advanced Science, EarlyView.
A 2D AgCrS2 volatile memristor is shown to switch via a cation‐driven valence change mechanism, where Ag+ reversibly intercalates into tetrahedral vacancies between CrS2 layers to form a conductive Ag2CrS2 pathway without elemental Ag metallization. The device exhibits 0.2 V switching, nA‐compliance power down to 200 pW, and endurance beyond 3 × 105 ...
Yueqi Su, Minghao Wang, Xiaolin Tai, Yuhua Liu, Yue Lin, Yuqiao Guo, Jing Peng, Yi Xie, Changzheng Wu   +8 more
wiley   +1 more source