Results 111 to 120 of about 3,057,682 (305)

Simulation‐Based Analysis of Insert Pull‐Out in Nickel‐Polyurethane Hybrid Foams Using CT‐Derived Geometries

Advanced Engineering Materials, EarlyView.
CT‐based finite element simulations combined with in situ X‐ray computed tomography are used to analyze insert pull‐out in nickel‐coated polymer foams. Despite variations in material parameters, deformation consistently concentrates within a narrow annular region around the insert.
Yannik Bautz, Jonas Fell, Hendrik Jost, Stefan Diebels, Hans‐Georg Herrmann   +4 more
wiley   +1 more source

Sample path properties of multidimensional integral with respect to stochastic measure

Modern Stochastics: Theory and Applications
The integral with respect to a multidimensional stochastic measure, assuming only its σ-additivity in probability, is studied. The continuity and differentiability of realizations of the integral are established.
Boris Manikin, Vadym Radchenko
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

CONVERGENCE OF MARKOV CHAIN APPROXIMATIONS TO STOCHASTIC REACTION DIFFUSION EQUATIONS [PDF]

In the context of simulating the transport of a chemical or bacterial contaminant through a moving sheet of water, we extend a well established method of approximating reaction-diffusion equations with Markov chains by allowing convection, certain ...
Michael A. Kouritzin, Hongwei Long
core  

Controllability of semilinear noninstantaneous impulsive neutral stochastic differential equations via Atangana-Baleanu Caputo fractional derivative

Alexandria Engineering Journal
This study mainly concerns the controllability of semilinear noninstantaneous impulsive neutral stochastic differential equations via the Atangana-Baleanu (AB) Caputo fractional derivative (FD).
Muhammad Sarwar, Sadam Hussain, Kamaleldin Abodayeh, Sawitree Moonsuwan, Thanin Sitthiwirattham   +4 more
doaj   +1 more source

Itô’s Formula, the Stochastic Exponential, and Change of Measure on General Time Scales

Abstract and Applied Analysis, 2017
We provide an Itô formula for stochastic dynamical equation on general time scales. Based on this Itô’s formula we give a closed-form expression for stochastic exponential on general time scales.
Wenqing Hu
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Stochastic analysis related to Gamma measures : Gibbs perturbations and associated diffusions [PDF]

, 2011
Hagedorn D. Stochastic analysis related to Gamma measures : Gibbs perturbations and associated diffusions.
Hagedorn, Dennis
core  

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source