Results 81 to 90 of about 193,926 (266)

Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias

open access: yesAdvanced Engineering Materials, EarlyView.
Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb   +3 more
wiley   +1 more source

Spectral Bounds and Exit Times for a Stochastic Model of Corruption

open access: yesMathematical and Computational Applications
We study a stochastic differential model for the dynamics of institutional corruption, extending a deterministic three-variable system—corruption perception, proportion of sanctioned acts, and policy laxity—by incorporating Gaussian perturbations into ...
José Villa-Morales
doaj   +1 more source

Seismic hazard versus design accelerograms [PDF]

open access: yesConstructii: Journal of Civil Engineering Research, 2012
The developments presented herewith arise from the legitimate wish and task of structural engineers of performing consistent analyses of risk and safety for works located in seismic regions. The paper adopts a probabilistic viewpoint, or philosophy.
Horea SANDI
doaj  

A comparison of numerical approaches for statistical inference with stochastic models. [PDF]

open access: yesStoch Environ Res Risk Assess, 2023
Bacci M   +4 more
europepmc   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Modeling and Forecasting Monkeypox Cases Using Stochastic Models. [PDF]

open access: yesJ Clin Med, 2022
Qureshi M   +6 more
europepmc   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan   +16 more
wiley   +1 more source

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