Advanced Electronic Materials, EarlyView.Resistive memory devices are explored for operation at extremely low temperatures relevant to quantum computing. The study reveals how transistor behavior strongly influences memory performance under cryogenic conditions and introduces an optimized programming strategy.
Emilio Pérez‐Bosch Quesada +11 more
wiley +1 more source
DPF-EHDNet: a differential-path and structurally enhanced network for thyroid ultrasound segmentation. [PDF]
Front Med (Lausanne)Feng X +7 more
europepmc +1 more source
Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses
Advanced Electronic Materials, EarlyView.Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol +7 more
wiley +1 more source
Hybrid Physics-Informed Residual Learning for Robust BDS-3 Satellite Clock Bias Prediction. [PDF]
Sensors (Basel)Cheng L +5 more
europepmc +1 more source
On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification
Advanced Electronic Materials, EarlyView.ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels +4 more
wiley +1 more source
A tri-level stochastic framework for planning integrated electricity, gas, and heating networks with enhanced resilience and renewable integration. [PDF]
Sci RepMoshkelgosha M +2 more
europepmc +1 more source
Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation
Advanced Electronic Materials, EarlyView.Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley +1 more source
Large language model assisted decision support framework for uncertainty aware detection and management of tomato lateral shoots. [PDF]
Front Plant SciJiang Y, Geng Y, Zheng Z, Pang X.
europepmc +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
Path integration in complex number space. [PDF]
Proc Natl Acad Sci U S ACraddock P, Miossec Y, Bouchekioua Y.
europepmc +1 more source