Results 141 to 150 of about 19,513 (183)

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci   +6 more
wiley   +1 more source

AI-powered detection of pumpkin leaf diseases using DualFusion-CBAM-stochastic for yield protection and precision agriculture. [PDF]

open access: yesFront Plant Sci
Bhuria R   +8 more
europepmc   +1 more source

Scan‐Path‐ and Initial‐State‐Dependent Superdomain Switching in (111)‐Oriented PZT

open access: yesAdvanced Electronic Materials, EarlyView.
Scan trajectory and initial superdomain topology govern polarization switching in (111)‐oriented PZT. Automated AFM writing, pulsing experiments, and interferometric 3D‐PFM show that raster scans reproducibly stabilize ordered Type‐I stripe superdomains with constrained variant selection, whereas spiral trajectories generate frustrated mixed‐variant ...
Rama Vasudevan   +11 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

open access: yesAdvanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali   +3 more
wiley   +1 more source

Linear and Programmable Long‐Term Plasticity in PECVD Amorphous SiC Memristors

open access: yesAdvanced Electronic Materials, EarlyView.
Stoichiometry‐engineered PECVD amorphous SiC memristors exhibit highly linear and programmable long‐term synaptic plasticity with a nonlinearity as low as 0.08. By controlling the local bonding environment, stable multilevel conductance updates are achieved, enabling robust neural‐network classification on MNIST and CIFAR‐10 and highlighting amorphous ...
Qin Liu   +6 more
wiley   +1 more source

X‐Ray TID Suppresses Inhibitory Plasticity of SnO‐Based Memristors and Its Impact on Neuromorphic Computation

open access: yesAdvanced Electronic Materials, EarlyView.
X‐ray irradiation suppresses inhibitory plasticity in SnO‐based volatile memristors, reducing nonlinearity and variability while improving neuromorphic learning accuracy. Despite a reduced dynamic range, irradiated devices achieve more stable and linear synaptic updates, leading to enhanced CNN performance.
Aiden Graham   +12 more
wiley   +1 more source

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