Results 61 to 70 of about 85,002 (312)

Stochastic Characteristics and Optimal Control for a Stochastic Chemostat Model with Variable Yield

open access: yesComplexity, 2020
In this paper, a stochastic chemostat model with variable yield and Contois growth function is investigated. The yield coefficient depends on the limiting nutrient, and the environmental noises are given by independent standard Brownian motions.
Rong Yan, Shulin Sun
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Temporal deep unfolding for constrained nonlinear stochastic optimal control

open access: yesIET Control Theory & Applications, 2022
This paper proposes a computational technique to solve discrete‐time optimal control problems for nonlinear systems subject to stochastic disturbances, hard input constraints, and soft constraints.
Masako Kishida, Masaki Ogura
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

open access: yesAdvanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone   +8 more
wiley   +1 more source

Optimal asset allocation for aggregated defined benefit pension funds with stochastic interest rates [PDF]

open access: yes, 2008
In this paper we study the optimal management of an aggregated pension fund of defined benefit type, in the presence of a stochastic interest rate. We suppose that the sponsor can invest in a savings account, in a risky stock and in a bond, with the ...
Rincón-Zapatero, Juan Pablo   +1 more
core  

Thermally Pre‐Formed Reconfigurable Resistive Random‐Access Memory Crossbar Arrays: A Dual‐Mode Platform for Robust Physically Unclonable Functions and In‐Memory Computing

open access: yesAdvanced Functional Materials, EarlyView.
A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon   +4 more
wiley   +1 more source

Non-linear dynamic characteristics and optimal control of giant magnetostrictive film subjected to in-plane stochastic excitation

open access: yesAIP Advances, 2014
The non-linear dynamic characteristics and optimal control of a giant magnetostrictive film (GMF) subjected to in-plane stochastic excitation were studied.
Z. W. Zhu, W. D. Zhang, J. Xu
doaj   +1 more source

Mesoscale Domain Evolution Mechanism during Alternating Current (AC) Poling of Relaxor Ferroelectrics

open access: yesAdvanced Functional Materials, EarlyView.
Ferroelectric domain variants that are energetically equivalent are expected to remain preserved during polarization reversal. However, phase‐field simulations reveal that inclined domain walls in relaxor ferroelectrics can undergo irreversible elimination during alternating current poling through a proximity effect driven by long‐range elastic ...
Yuan‐Jie Sun   +2 more
wiley   +1 more source

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