Results 71 to 80 of about 68,699 (263)

Stochastic Momentum Method With Double Acceleration for Regularized Empirical Risk Minimization

open access: yesIEEE Access, 2019
Momentum acceleration technique is famously known for building gradient-based algorithms with fast convergence in large-scale optimization. Recently, Nesterov 's momentum and Katyusha momentum have significantly improved the convergence for stochastic ...
Zhijian Luo, Siyu Chen, Yuntao Qian
doaj   +1 more source

DigiChrom: A Domain Ontology for Semantic Representation of Trivalent Chromium Platings and Its Large Language Model‐Based Alignment With Multiple Mid‐Level Ontologies

open access: yesAdvanced Engineering Materials, EarlyView.
Digitalizing electroplating requires both domain knowledge and interoperability. This work introduces PlatOn, a domain ontology for trivalent chromium plating and coating characterization, and a hybrid pipeline that aligns it to a mid‐level reference ontology by combining eight similarity metrics with language model reasoning. Expert‐validated mappings
Janik Harter   +10 more
wiley   +1 more source

Solving Stochastic Machining Economics Problem Using Simulation Optimization Approach

open access: yesJournal of King Saud University: Engineering Sciences, 2010
The emerging of simulation and optimization approaches achieves a rapid growth in recent years. In this paper, the new concept of simulation optimization is applied to solve machining economic problem with stochastic tool life for turning operations. The
Abdulrahman M. Al-Ahmari
doaj   +1 more source

Multilayer Self‐Limiting Electrospray Deposition via Stepped Voltage Bias

open access: yesAdvanced Engineering Materials, EarlyView.
Self‐limiting electrospray deposition (SLED) uses a high voltage to generate and deposit a charged payload on a target surface. The coating retains its charge, repelling newly arriving material. SLED thickness can be decreased by applying a secondary bias to the target.
Madhuri Deb   +3 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Test data sets for calibration of stochastic and fractional stochastic volatility models

open access: yesData in Brief, 2016
Data for calibration and out-of-sample error testing of option pricing models are provided alongside data obtained from optimization procedures in ''On calibration of stochastic and fractional stochastic volatility models'' [1].
Jan Pospíšil, Tomáš Sobotka
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Three‐Dimensional Anomalous Hall Sensing Enabled By Spin–Orbit Torque Driven Domain Reconfiguration In Chiral Multilayers

open access: yesAdvanced Functional Materials, EarlyView.
A three‐dimensional magnetic field sensor is realized in chiral W/CoFeB/MgO multilayers, where spin–orbit torques reversibly reconfigure homochiral stripe domains. The symmetry of the torque enables offset‐free in‐plane sensing, while the reproducible domain reconfiguration extends the linear out‐of‐plane range. An anomalous Hall readout delivers large‐
Sabri Koraltan   +16 more
wiley   +1 more source

Analyses of Methods and Algorithms for Modelling and Optimization of Biotechnological Processes [PDF]

open access: yesBioautomation, 2009
A review of the problems in modeling, optimization and control of biotechnological processes and systems is given in this paper. An analysis of existing and some new practical optimization methods for searching global optimum based on various advanced ...
Stoyan Stoyanov
doaj  

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