Results 101 to 110 of about 1,063,535 (299)

Ordering Results Between Two Finite α-Mixture Models with Components Following Modified Proportional Hazard Rate Model

open access: yesMathematics
Finite α-mixture models are widely used in reliability engineering and survival analysis to model heterogeneous populations arising from multiple latent failure mechanisms.
Supriya Sahoo   +2 more
doaj   +1 more source

Bounds for present value functions with stochastic interest rates and stochastic volatility. [PDF]

open access: yes
The distribution of the present value of a series of cash flows under stochastic interest rates has been investigated by many researchers. One of the main problems in this context is the fact that the calculation of exact analytical results for this type
Kaas, R   +4 more
core  

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Some New Results Related to the Likelihood Ratio and the Laplace Transform Ordering

open access: yesMathematics
The purpose of this paper is twofold. First, we aim to study some new properties and relations for the likelihood ratio order. In particular, we present new integral inequalities involving the ratio of two probability density functions and the ratio of ...
Abdulaziz Alenazi
doaj   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

RSD: An R package to calculate stochastic dominance

open access: yesSoftwareX
Stochastic dominance is a classical method for comparing two random variables using their probability distribution functions. As for all stochastic orders, stochastic dominance does not always establish an order between the random variables, and almost ...
Shayan Tohidi, Sigurdur Olafsson
doaj   +1 more source

Stochastically ordered aggregation operators

open access: yesInternational Journal of Approximate Reasoning
J. Baz is partially supported by Programa Severo Ochoa of Principality of Asturias (BP21042). F. Pellerey carried out this study within the FAIR - Future Artificial Intelligence Research and received funding from the European Union Next-GenerationEU (Piano Nazionale di Ripresa e Resilienza (PNRR) Missione 4 Componente 2, Investimento 1.3 D.D.
Juan Baz, Juan   +3 more
openaire   +3 more sources

On stochastic comparisons of population age structures and life expectancies [PDF]

open access: yes
Cohort measures, describing a lifetime random variable are easily and unambiguously obtained using standard tools. On the contrary, the lifetime random variable, and therefore life expectancy, for the period setting cannot be unambiguously defined ...
Maxim Finkelstein
core  

Negative aging and stochastic comparisons of residual lifetimes in multivariate frailty models [PDF]

open access: yes, 2010
Departamento de Economía, Métodos Cuantitativos e Hª Económica, Área de Estadísitca e I.O.
Rodríguez-Griñolo, Rosario   +7 more
core   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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