Results 101 to 110 of about 2,899,334 (284)

Simulation‐Based Analysis of Insert Pull‐Out in Nickel‐Polyurethane Hybrid Foams Using CT‐Derived Geometries

open access: yesAdvanced Engineering Materials, EarlyView.
CT‐based finite element simulations combined with in situ X‐ray computed tomography are used to analyze insert pull‐out in nickel‐coated polymer foams. Despite variations in material parameters, deformation consistently concentrates within a narrow annular region around the insert.
Yannik Bautz   +4 more
wiley   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

Observer-Based Induced L∞ Control for Nonlinear Systems With Deception Attacks

open access: yesIEEE Access
In this paper, the observer-based induced ${\mathcal {L}}_{\infty }$ control problem for nonlinear systems with deception attacks is studied. Construct the T–S fuzzy model to linearly approximate the nonlinearity of the system.
Ying Tian, Ming-Yang Qiao
doaj   +1 more source

On Stability of Multistage Stochastic Programs [PDF]

open access: yesSIAM Journal on Optimization, 2008
We study the quantitative stability of linear multistage stochastic programs under perturbations of the underlying stochastic processes. It is shown that the optimal values behave Lipschitz continuously with respect to an $L^p$-distance. In order to establish continuity of the recourse function with respect to the current state of the stochastic ...
openaire   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Stochastic stability and stabilization [PDF]

open access: yesThe 2002 International Conference on Control and Automation, 2002. ICCA. Final Program and Book of Abstracts., 2005
openaire   +2 more sources

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

open access: yesAdvanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee   +16 more
wiley   +1 more source

Input-to-State Stability of Linear Stochastic Functional Differential Equations

open access: yesJournal of Function Spaces, 2016
The purpose of the paper is to show how asymptotic properties, first of all stochastic Lyapunov stability, of linear stochastic functional differential equations can be studied via the property of solvability of the equation in certain pairs of spaces of
Ramazan Kadiev, Arcady Ponosov
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

Robust Stability and Stabilization of a Class of Uncertain Nonlinear Discrete-Time Stochastic Systems with Interval Time-Varying Delays

open access: yesJournal of Control Science and Engineering, 2016
This paper deals with the problems of the robust stochastic stability and stabilization for a class of uncertain discrete-time stochastic systems with interval time-varying delays and nonlinear disturbances.
Shuang Liang, Yali Dong
doaj   +1 more source

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