Results 121 to 130 of about 5,135 (265)

Analog Weight Update Rule in Ferroelectric Hafnia, Using picoJoule Programming Pulses

Advanced Electronic Materials, EarlyView.
Resistive, ferroelectric synaptic weights based on BEOL‐compatible hafnia/zirconia nanolaminates are fabricated. Lateral downscaling the devices below 10 µm2 enables 20 ns programming with electrical pulses, dissipating ≤ 3 pJ. Experimental results show that final conductance state is set by pulse amplitude, and is largely independent of the initial ...
Alexandre Baigol, Nikhil Garg, Matteo Mazza, Yanming Zhang, Elisa Zaccaria, Wooseok Choi, Bert Jan Offrein, Laura Bégon‐Lours   +7 more
wiley   +1 more source

People Counting and Positioning Using Low‐Resolution Infrared Images for FeFET‐Based In‐Memory Computing

Advanced Electronic Materials, EarlyView.
In this work, low‐resolution infrared imaging is combined with a 28 nm FeFET IMC architecture to enable compact, energy‐efficient edge inference. MLC FeFET devices are experimentally characterized, and controlled multi‐level current accumulation is validated at crossbar array level.
Alptekin Vardar, Li Zhang, Alexander Rehmer, Marc Lupp, Subhashree Baskaran, Osama Abdelaal, Franz Müller, Nandakishor Yadav, Bing Li, Thomas Kämpfe   +9 more
wiley   +1 more source

On the Role of Preprocessing and Memristor Dynamics in Reservoir Computing for Image Classification

Advanced Electronic Materials, EarlyView.
ABSTRACT Reservoir computing (RC) is an emerging recurrent neural network architecture that has attracted growing attention for its low training cost and modest hardware requirements. Memristor‐based circuits are particularly promising for RC, as their intrinsic dynamics can reduce network size and parameter overhead in tasks such as time‐series ...
Rishona Daniels, Duna Wattad, Ronny Ronen, David Saad, Shahar Kvatinsky   +4 more
wiley   +1 more source

Enhanced Resistive Switching Uniformity in Tantalum Oxide Memristor Devices via Copper Implantation

Advanced Electronic Materials, EarlyView.
Metal oxide memristor devices typically suffer from uncontrolled forming processes and limited resistive switching uniformity due to the stochastic formation of an oxygen vacancy filament. Improved resistive switching uniformity in Ta2O5 memristor is developed by Cu implantation in the switching oxide.
Shaochuan Chen, Ilia Valov
wiley   +1 more source

Highly‐Uniform Passive Crossbar Arrays of Resistive Switching Random Access Memory (RRAM) for In‐Memory Computing Applications

Advanced Electronic Materials, EarlyView.
Passive resistive memory arrays promise efficient in‐memory computing but suffer from sneak paths and programming variability. Here, highly uniform 32 × 32 passive RRAM crossbars are programmed with multilevel precision below 3% error and 99.5% yield.
S. Ricci, P. Mannocci, M. Porzani, D. Bridarolli, F. Carletti, M. Farronato, D. Ielmini   +6 more
wiley   +1 more source

Scan‐Path‐ and Initial‐State‐Dependent Superdomain Switching in (111)‐Oriented PZT

Advanced Electronic Materials, EarlyView.
Scan trajectory and initial superdomain topology govern polarization switching in (111)‐oriented PZT. Automated AFM writing, pulsing experiments, and interferometric 3D‐PFM show that raster scans reproducibly stabilize ordered Type‐I stripe superdomains with constrained variant selection, whereas spiral trajectories generate frustrated mixed‐variant ...
Rama Vasudevan, Laveeza Ahmad, Bharat Pant, Ralph Bulanadi, Asraful Haque, Puneet Kaur, Sabine Neumayer, Jan‐Chi Yang, Yongtao Liu, Ye Cao, Stephen Jesse, Marti Checa   +11 more
wiley   +1 more source

Artificial Intelligence for Fluorite Ferroelectric Materials: From Discovery to Optimization

Advanced Electronic Materials, EarlyView.
Artificial intelligence accelerates the discovery and optimization of HfO2‐based fluorite ferroelectrics by linking synthesis, structure, properties, and device performance. Machine learning, deep‐learning analysis, and AI‐driven atomistic modeling enable predictive design, dopant screening, and closed‐loop optimization toward next‐generation ...
Faizan Ali, David Lehninger, Florencio Sánchez, Ignasi Fina   +3 more
wiley   +1 more source

Linear and Programmable Long‐Term Plasticity in PECVD Amorphous SiC Memristors

Advanced Electronic Materials, EarlyView.
Stoichiometry‐engineered PECVD amorphous SiC memristors exhibit highly linear and programmable long‐term synaptic plasticity with a nonlinearity as low as 0.08. By controlling the local bonding environment, stable multilevel conductance updates are achieved, enabling robust neural‐network classification on MNIST and CIFAR‐10 and highlighting amorphous ...
Qin Liu, Omesh Kapur, Bohao Ding, Fangnan Chen, Bingkai Ding, Ruomeng Huang, C. H. Kees de Groot   +6 more
wiley   +1 more source

Impact of capital market volatility on economic growth - An analysis based on stochastic volatility model. [PDF]

Heliyon
Chang M, Li Y.
europepmc   +1 more source

X‐Ray TID Suppresses Inhibitory Plasticity of SnO‐Based Memristors and Its Impact on Neuromorphic Computation

Advanced Electronic Materials, EarlyView.
X‐ray irradiation suppresses inhibitory plasticity in SnO‐based volatile memristors, reducing nonlinearity and variability while improving neuromorphic learning accuracy. Despite a reduced dynamic range, irradiated devices achieve more stable and linear synaptic updates, leading to enhanced CNN performance.
Aiden Graham, Zohreh Hajiabadi, Alexander H. Wang, Asep Nugroho, Om K. Prasad, Uma Sankar Rout, Christian Patzig, Irwan Purnama, Liam Godfrey, Marcello Borri, Bingkai Ding, Harold M. H. Chong, Firman M. Simanjuntak   +12 more
wiley   +1 more source