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Commutation Behavior and Stray Inductance Analysis of a FC-3L-BDC Phase-Leg PEBB
The bidirectional dc-dc converter is a critical component for extending the use of renewable energy and improving the efficiency of high-power electronic systems.
Shunmeng Xie
exaly +4 more sources
Determination of Stray Inductance of Low-Inductive Laminated Planar Multiport Busbars Using Vector Synthesis Method [PDF]
Laminated busbars connect capacitors with switching power modules, and they are designed to have low stray inductance to minimize electromagnetic interference. Attempts to accurately measure the stray inductance of these busbars have not been successful.
Wei Kang, Volker Pickert, Haimeng Wu
exaly +6 more sources
A Low-Stray-Inductance 1200 V/500 A SiC Power Module Based on Multilayer Insulated Metal Substrate [PDF]
With the growing need for high-power density, high-efficiency power electronics, wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), have been widely used in recent years.
Youyuan Yue +3 more
doaj +2 more sources
Partial Stray Inductance Modeling and Measuring of Asymmetrical Parallel Branches on the Bus-Bar of Electric Vehicles [PDF]
In order to increase the power rating of electric vehicles, insulated gate bipolar translator (IGBT) modules with multiple power terminals are usually adopted.
Chengfei Geng +3 more
doaj +2 more sources
In this study, we present a venting clip for high‐power applications that is intended to reduce stray inductance. To reduce the stray inductance of packages in high‐power applications, the proposed venting clip features slots are inserted onto a ...
Sungkyu Kwon +2 more
exaly +2 more sources
The TAPIR technology (compacT and modulAr Power modules with IntegRated cooling) requires a multiphysics analysis to prove its interest compared to current power module solutions.
W-F. Bikinga +5 more
doaj +1 more source
Parametric Modeling and Analysis of High Power IGBT Device
In the high-power IGBT module commutation circuit, under the combined impact of stray inductance and di/dt, the IGBT is under significant voltage and current stresses during the processes of switching on and off, which increases system losses and ...
LIU Fei, MAO Kaixiang
doaj +3 more sources
In high-frequency electronic equipment and power electronic devices, the dynamic performance of switching devices is one of the important indicators, and a double-pulse test circuit is usually used to test the dynamic performance of switching devices. In
Yan-Kun Xia, Xin-Yang Li
doaj +1 more source
Optimization of Metalized Film Capacitor Connection to Reduce Stray Inductance [PDF]
In power electronic applications, due to switching components, the inverter dc-bus generates current pulses at low frequencies and high frequencies (HFs). Usually, a dc-bus capacitor is sized to absorb the current peaks at the switching frequency and to stabilize the dc voltage. For decoupling the HF harmonics, an additional capacitor is required. This
Penven, Theo +6 more
openaire +3 more sources
Design and evaluation of SiC multichip power module with low and symmetrical inductance
Compared to silicon devices, silicon carbide (SiC) devices have much lower C(oss) and Q(g); they can switch at much higher speed, SiC power modules are thus more sensitive to stray parameters.
Shao Weihua +4 more
doaj +1 more source

