Results 111 to 120 of about 12,226 (312)

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

open access: yesAdvanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite   +5 more
wiley   +1 more source

The structure of approximate lattices in linear groups

open access: yes, 2023
Approximate lattices are aperiodic generalisations of lattices of locally compact groups that were first studied in seminal work of Yves Meyer.
Machado, Simon
core  

Finite-size scaling for four-dimensional Higgs-Yukawa model near the Gaussian fixed point

open access: yesJournal of High Energy Physics, 2019
We analyse finite-size scaling behaviour of a four-dimensional Higgs-Yukawa model near the Gaussian infrared fixed point. Through improving the mean-field scaling laws by solving one-loop renormalisation group equations, the triviality property of this ...
David Y.-J. Chu   +3 more
doaj   +1 more source

Particle structure analysis of soliton sectors in massive lattice field theories [PDF]

open access: yesCommunications in Mathematical Physics, 1988
We discuss the particle structure in the soliton sectors of massive lattice field theories by means of convergent cluster expansions. In several models we prove that the soliton field operator with lowest charge couples the vacuum to a stable one-particle state, in a suitable region of the coupling parameter space.
openaire   +3 more sources

Ferroelectricity in Antiferromagnetic Wurtzite Nitrides

open access: yesAdvanced Functional Materials, EarlyView.
We establish MnSiN2${\rm MnSiN}_2$ and MnGeN2${\rm MnGeN}_2$ as aristotypes of a new multiferroic wurtzite family that simultaneously exhibits ferroelectricity and antiferromagnetism with altermagnetic spin splitting. By strategically substituting alkaline‐earth metals, we predict new materials with coexisting switchable polarization, spin texture, and
Steven M. Baksa   +3 more
wiley   +1 more source

New constructions of uni-nullnorms on certain classes of bounded lattices by closure (interior) operators [PDF]

open access: yes
summary:The primary aim of this article is to put forward new classes of uni-nullnorms on certain classes of bounded lattices via closure (interior) operators.
Wu, Tao
core   +1 more source

Polarizable Vanadium Dipoles Promote Water Dissociation on Vanadium‐Based Metal Organic Framework

open access: yesAdvanced Functional Materials, EarlyView.
The polarization of unpaired V 3d electrons weakens the H─O bond to improve water dissociation by the dual Vδ+:O─H and Pλ−:H─O coupling hydrogen bonds formation and relaxation. P@V‐MOF electrocatalyst shows low overpotentials (94 mV in acid, 178 mV in neutral, and 77 mV in alkaline solutions) with excellent stability for effective overall water ...
Xinjuan Liu   +13 more
wiley   +1 more source

Subdiffusion of nonlinear waves in quasiperiodic potentials

open access: yesNew Journal of Physics, 2012
We study the time evolution of wave packets in one-dimensional quasiperiodic lattices which localize linear waves. Nonlinearity (related to two-body interactions) has a destructive effect on localization, as observed recently for interacting atomic ...
M Larcher   +5 more
doaj   +1 more source

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

open access: yesAdvanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand   +5 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

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