Results 71 to 80 of about 64,809 (293)
Mg─Te chalcogenides address the leakage scaling trade‐off in ultrathin selector‐only memory. Structural partitioning in multiphase Mg─Te, combined with highly ionic Mg─Te bonding and Hf interfacial engineering, supports reliable 5 nm thickness operation at low write voltage with suppressed leakage current, narrow threshold voltage distributions, 10 ns ...
Yoori Seo +5 more
wiley +1 more source
Reducing Variability in Subthreshold Circuits [PDF]
Reduced form-factor in portable electronics has made energy-efficiency the primary target. Subthreshold operation is a low-power technique delivering significant energy efficiency. However, circuits in subthreshold are very sensitive to process variation.
Sankaranarayanan, Rajsaktish
core +1 more source
Binge and Emotional Eating in obese subjects seeking weight loss treatment [PDF]
Objective: Binge Eating Disorder (BED) is highly prevalent among individuals seeking weight loss treatment. Considering the possible trigger factors for BED, different studies focused on the role of emotional eating. The present study compared threshold,
Edoardo Mannucci +7 more
core
Volatile Memristive Devices With Tunable Temporal Dynamics For Event‐Based Sensing
Tunable volatile memristive devices can serve various neural‐inspired tasks that require different time windows of information retention. The ionic‐based volatility of the presented Pt/a‐STO/TaOx/Ta device stack can be reproducibly and controllably tuned in multiple ways.
Dimitrios Spithouris +7 more
wiley +1 more source
Subthreshold Circuit Performance Investigation under Temperature Variations
Ultra-low-power (ULP) circuits have received widespread attention due to the rapid growth of biomedical applications and Battery-less Electronics. Subthreshold region of transistor operation is used in ULP circuits.
Mohd. Hasan, Ajmal Kafeel, S. D. Pable
core +1 more source
Dual‐State Programmable Oxide Transistor for Time‐Based Cryptography
A DUPOT enables independently tunable Vth and Isat depending on gate bias polarity, producing three‐dimensional dynamical behavior within a transfer characteristic. This behavior originates from charge trapping and oxygen‐ion migration in the HfO2 layer.
Huisu Noh +9 more
wiley +1 more source
Background Although the association between depression and excess mortality has been well established, it is not clear whether this is greater in major depression than in subthreshold depression.
Vogelzangs, Nicole +6 more
core +1 more source
An Ultra-Low-Power 0.8 V, 60 nW Temperature Sensor for Battery-Less Wireless Sensor Networks
This work presents a nano-watt digital output temperature sensor featuring a supply-insensitive, self-biased current source. Second-order temperature dependencies of the MOS diode are canceled to produce a stable reference and a linear temperature ...
Naveed, Jeff Dix
doaj +1 more source
Reconciling threshold and subthreshold expansions for pion–nucleon scattering [PDF]
Heavy-baryon chiral perturbation theory (ChPT) at one loop fails in relating the pion–nucleon amplitude in the physical region and for subthreshold kinematics due to loop effects enhanced by large low-energy constants.
Krebs, H. +14 more
core +2 more sources
Lithography‐Compatible Conductive Metal–Organic Frameworks for Scalable Electronics
Conductive MOF thin films are integrated as gate electrodes in semiconductor devices through a photolithography‐compatible patterning strategy. CVD‐grown 2D MOF thin films enable stable operation across bottom‐gate MoS2/MoTe2 field‐effect transistors and top‐gate IGZO arrays, highlighting the potential of conductive MOFs as functional electronic ...
Hyeonwoo Lee +9 more
wiley +1 more source

