Results 81 to 90 of about 64,809 (293)
i-Perception, 2012 A focal stimulus outside the receptive field robustly induces LFP change, while the same stimulus evokes no spike activity. We determined how this subthreshold LFP change interacted with spike response to the RF stimulus.
Kayeon Kim, Choongkil Lee
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Recent Advances in Plasma‐Enhanced Atomic Layer Etching for Next‐Generation Nanofabrication
Advanced Materials Interfaces, EarlyView.Continued semiconductor miniaturization demands atomic‐scale patterning and ultralow surface roughness beyond the capabilities of conventional reactive ion etching. This review highlights advances in isotropic and anisotropic plasma‐enhanced atomic layer etching since 2020, covering fundamental mechanisms, applications across major semiconductor ...
Shih‐Nan Hsiao
wiley +1 more source
MicromachinesA high resolution, acceptable accuracy and low power consumption time-domain temperature sensor is proposed and simulated in this paper based on a 180 nm standard CMOS technology.
Yixiao Sun +3 more
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Nature‐Derived Chitosan Biopolymer: A Promising Candidate for Sustainable Electronics
Advanced Materials Technologies, EarlyView.In the creation of environmentally friendly devices, nature‐derived chitosan biopolymer is a promising contender for sustainable electronic research. It can be utilized to create more ecologically friendly scalable gadgets and has a variety of uses in different active layers of electronics.
Joshua McDonald +3 more
wiley +1 more source
Frontiers in Cellular Neuroscience, 2015 Neurons rely on action potentials, or spikes, to encode information. But spikes can encode different stimulus features in different neurons. We show here through simulations and experiments how neurons encode the integral or derivative of their input ...
Stephanie eRatté +9 more
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Advanced Materials Technologies, EarlyView.An O radical‐induced n‐to‐p transition in PbS quantum dots (QDs) is achieved via atmospheric Ar/O2 treatment, enabling favorable band alignment and stable photogating in PbS QD/IGZO phototransistors. Interfacial defect passivation and Fermi‐level modulation, confirmed by XPS and UPS analyses, effectively suppress dark current, induce a positive VTH ...
MD Redowan Mahmud Arnob +4 more
wiley +1 more source
A general subthreshold MOS translinear theorem
ISCAS'99. Proceedings of the 1999 IEEE International Symposium on Circuits and Systems VLSI (Cat. No.99CH36349), 2003 This paper outlines the conditions under which the Translinear Principle can be fully exploited for MOS transistors operating in subthreshold. Due to the exponential nature of subthreshold MOS transistors the Translinear principle applies immediately as long as the Source-to-Bulk voltages are made equal to zero (or constant).
Serrano Gotarredona, María Teresa +2 more
openaire +5 more sources
Advanced Materials Technologies, EarlyView.The dual‐gate coplanar a‐IGZO/C‐IGO/a‐IGZO TFT is investigated, exhibiting a high filed‐effect mobility of 53.81 cm2 V−1s−1 with excellent stability. The amorphous IGZO layer provides smooth surface, which carrier scattering and high‐quality interface between gate insulator and active layer.
Solbee Lee +4 more
wiley +1 more source
Optimization and Characterization of CMOS for Ultra Low Power Applications
Journal of Nanotechnology, 2015 Aggressive voltage scaling into the subthreshold operating region holds great promise for applications with strict energy budget. However, it has been established that higher speed superthreshold device is not suitable for moderate performance ...
Mohd. Ajmal Kafeel +3 more
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, 2004 with a single grain boundary (GB) present in the channel, is simu-lated using two–dimensional numerical simulation, which includes a model of deep trap states at GBs.
Mizuta, Hiroshi +9 more
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