Results 231 to 240 of about 141,240 (252)

Analysis of Subthreshold Swing in Symmetric Junctionless Double Gate MOSFET Using high-k Gate Oxides

International Journal of Electrical and Electronic Engineering & Telecommunications, 2019
We observed the change of the subthreshold swings when the high-k material was used for the gate oxide of the junctionless double gate MOSFET (JLDG MOSFET).
Hakkee Jung
semanticscholar   +1 more source

Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

Journal of Semiconductors, 2014
This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method.
Gopal Rawat, Sanjay Kumar, Ekta Goel, Mirgender Kumar, Sarvesh Dubey, S. Jit   +5 more
openaire   +1 more source

Subthreshold swing model for asymmetric 3T double gate (DG) MOSFETs

2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010
In this paper, a short-channel subthreshold swing model for three-terminal (3T) double-gate (DG) MOSFETs with Gaussian doping profile in the vertical direction of the channel is presented. The effective conduction path effect concept of uniformly doped DG MOSFETs is utilized to incorporate the doping dependency in the present model.
Pramod Kumar Tiwari, Sarvesh Dubey, S. Jit   +2 more
openaire   +1 more source

Negative Bias Temperature Instability on Subthreshold Swing of SiC MOSFET

Materials Science Forum, 2017
The NBTI characteristics of SiC MOSFET were studied by the subthreshold swing. The subthreshold swing was found to be very sensitive to the starting bias of transfer curve. The increase of subthreshold swing for MOSFET with poor oxide reached 400% when the starting bias was-15V.
Cheng Tyng Yen, Hsiang Ting Hung, Chien Chung Hung, Lurng Shehng Lee, Chwan Ying Lee, Yao Feng Huang, Fu Jen Hsu, Tzong Liang Chen   +7 more
openaire   +1 more source

Physical investigation of subthreshold swing degradation behavior in negative capacitance FET

Science China Information Sciences, 2022
Mengxuan Yang, Qianqian Huang, Kaifeng Wang, Chang Su, Liang Chen, Yangyuan Wang, Ruei-Hao Huang   +6 more
semanticscholar   +1 more source

A new model of subthreshold swing for sub-100nm MOSFETs

Microelectronics Reliability, 2008
Abstract A novel subthreshold swing model that linearly depends on the drain bias voltage (Vds) and negative-exponentially depends on the effective channel length (Leff) is proposed for LDD MOSFETs on 90 nm CMOS technology. It simplifies the description of the effective gate overdrive voltage (Vgte) and yields a single-equation I–V compact model to ...
Lin-An Yang, Chun-Li Yu, Yue Hao
openaire   +1 more source

In2O3 Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications.

ACS Nano, 2018
Heat dissipation is a key issue for scaling metal-oxide-semiconductor field-effect transistors (MOSFETs). The Boltzmann distribution of electrons imposes a physical limit on the subthreshold swing (SS), which impedes both the reduction of the switching ...
Qian Xu, Xingqiang Liu, Bensong Wan, Zheng Yang, Fangtao Li, Junfeng Lu, Guofeng Hu, Caofeng Pan, Zhong Lin Wang   +8 more
semanticscholar   +1 more source

Analytical threshold voltage and subthreshold swing model for TMG FinFET

International Journal of Electronics, 2018
An analytical modelling of the subthreshold surface potential, threshold voltage (VT) and subthreshold swing (SS) for a triple material gate (TMG) FinFET is presented. The basis of the 3D solution is two separate 2D solutions. The FinFET is separated into two 2D structures: asymmetric triple material double gate (TMDG) and symmetric TMDG MOSFETs. Their
Rajesh Saha, Brinda Bhowmick, Srimanta Baishya   +2 more
openaire   +1 more source

Power efficient transistors with low subthreshold swing using abrupt switching devices

Nano Energy, 2022
Jamal Aziz, Honggyun Kim, T. Hussain, Ho-Yeun Lee, T. Choi, Shania Rehman, Muhammad Farooq Khan, Kalyani D. Kadam, H. Patil, Syed Muhammad Zain Mehdi, Myoung-Jae Lee, Sang Jun Lee, D. Kim   +12 more
semanticscholar   +1 more source

Basic Science and Development of Subthreshold Swing Technology

2023
P. Suveetha Dhanaselvam, D. Sriram Kumar, B. Karthikeyan, P. Vanitha   +3 more
openaire   +1 more source