Results 211 to 220 of about 5,282 (241)

Junction technologies for devices with steep subthreshold swing

2009 International Workshop on Junction Technology, 2009
In this paper, we examine the Impact Ionization Field-Effect Transistor (I-FET or I-MOS) as well as the Tunnel Field-Effect Transistor (T-FET), paying attention to junction and material design requirements based on device physics considerations. Device performance parameters and electrical characteristics of I-MOS and T-FET devices are dependent on ...
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Modeling of MOSFET subthreshold swing mismatch with BSIM4 Model

2016 IEEE International Conference on Semiconductor Electronics (ICSE), 2016
In this paper, we propose a methodology to model the MOSFET subthreshold swing, S mismatch by using BSIM4 model. The 0.18µm CMOS technology silicon data show two trends in the swing mismatch plot. For large-size devices (larger than a critical area A C ), the subthreshold swing behaves in a linear trend with smaller slope compared to small-size devices.
Xing Er Bee, Mohamad Marzuki Bin Mohd Fauzi, Philip Beow Yew Tan   +2 more
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Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

Journal of Semiconductors, 2014
This paper presents the analytical modeling of subthreshold current and subthreshold swing of short- channel fully-depleted (FD) strained-Si-on-insulator (SSOI) MOSFETs having vertical Gaussian-like doping pro- file in the channel. The subthreshold current and subthreshold swing have been derived using the parabolic approx- imation method.
Gopal Rawat, Sanjay Kumar, Ekta Goel, Mirgender Kumar, Sarvesh Dubey, S. Jit   +5 more
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InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold Swing

2019 Device Research Conference (DRC), 2019
Low InP/dielectric interface trap density $D_{\mathrm{it}}$ will enable low subthreshold swings $(SS)$ in mm-wave MOSFETs [1] using InGaAs/InP composite channels [2] for increased breakdown and in tunnel FETs (TFETs) [3] using InAs/InP heterojunctions [4] for increased tunneling probability. Reducing $D_{\mathrm{it}}$ at the etched InP mesa edges
Hsin-Ying Tseng, Yihao Fang, Shibo Zhong, Mark J. W. Rodwell   +3 more
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Quasi-3D subthreshold current and subthreshold swing models of dual-metal quadruple-gate (DMQG) MOSFETs

Journal of Computational Electronics, 2015
Quasi-3D models of subthreshold current and subthreshold swing for Dual-Metal Quadruple-Gate (DMQG) MOSFETs are presented in this paper. Equivalent number of gates (ENGs) concept has been utilized to calculate the effective natural length $$\lambda _{DMQG}$$?DMQG of DMQG MOSFETs in spite of solving three-dimensional (3D) Poisson's equation.
Visweswara Rao Samoju, Sarvesh Dubey, Pramod Kumar Tiwari   +2 more
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Analytical modeling of subthreshold current and subthreshold swing of an underlap DGMOSFET with tied–independent gate and symmetric–asymmetric options

Microelectronics Journal, 2011
Novel analytical models for subthreshold current and subthreshold slope of a generic underlap DGMOSFET are proposed. The proposed models are validated with published models, experimental data along with numerical simulation results. The reasonably good agreement shows the accuracy of the proposed model.
Ramesh Vaddi, R. P. Agarwal, Sudeb Dasgupta   +2 more
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Analytical modeling of subthreshold swing in undoped trigate SOI MOSFETs

Journal of Computational Electronics, 2016
A new analytical model for the subthreshold swing of nanoscale undoped trigate silicon-on-insulator metal---oxide---semiconductor field-effect transistors (MOSFETs) is proposed, based on the channel potential distribution and physical conduction path concept.
Hamdam Ghanatian, Seyed Ebrahim Hosseini
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Realizing steep subthreshold swing with Impact Ionization Transistors

2009 International Symposium on VLSI Technology, Systems, and Applications, 2009
Recent developments in Impact Ionization Transistors (I-MOS) will be discussed here, including strained impact ionization transistors realized on the nanowire or multiple-gate device architecture. I-MOS devices achieve excellent subthreshold swings well below 5 mV/decade at room temperature.
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Vertical-dual-source tunnel FETs with steeper subthreshold swing

Journal of Semiconductors, 2016
In order to improve the drive current and subthreshold swing (SS), a novel vertical-dual-source tunneling field-effect transistor (VDSTFET) device is proposed in this paper. The influence of source height, channel length and channel thickness on the device are investigated through two-dimensional numerical simulations. Si-VDSTFET have greater tunneling
Zhi Jiang, Yiqi Zhuang, Cong Li, Ping Wang, Yuqi Liu   +4 more
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Trend of subthreshold swing with DPN process for 28nm N/PMOSFETs

2013 International Symposium on Next-Generation Electronics, 2013
Although decoupled plasma nitridation (DPN) post high-k dielectric deposition shows the better threshold voltage shift than post deposition anneal (PDA), the non-adequate plasma nitrogen (N) concentration and anneal temperature still can dominate the device performance.
null Mu-Chun Wang, null Chong-Kuan Du, null Min-Ru Peng, null Shea-Jue Wang, null Shuang-Yuan Chen, null Chuan-Hsi Liu, O. Cheng, L. S. Huang, null Shih Ching Lee   +8 more
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