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A mathematical model for investigation of dry band location on 22 kV bushing with and without RTV coating: Experimental study. [PDF]
Kalaivani L +10 more
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Rain may improve survival from direct lightning strikes to the human head. [PDF]
Machts R +5 more
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Phase Dependence of Surface Charge Measurement on Epoxy Insulator in C4F7N/CO2 under AC Voltage. [PDF]
Li S, Gao Y, Lu D, Huang P, Du B.
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Study on the Electrical Insulation Properties of Modified PTFE at High Temperatures. [PDF]
Yuan L +5 more
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Experimental Investigation of Reflectarray Antennas for High-Power Microwave Applications. [PDF]
Zhao J +10 more
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3D Numerical Simulation for Thermal Protection of Phase Change Material-Integrated Firefighters' Turnout Gear. [PDF]
Xu SS, Pollard J, Zhao W.
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Initiation of HPM Surface Flashover
2007 IEEE 34th International Conference on Plasma Science (ICOPS), 2007Summary form only given. Surface flashover formation at dielectric/air interfaces during pulsed high power microwave (HPM) excitation can severely limit the power densities which can be transmitted into atmospheric medium. Previous studies on HPM surface flashover in the S-band at 5 MW power levels have reported on the contributing factors to flashover
G. F. Edmiston +4 more
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Atmospheric Research, 1998
The main objective of the present study is to further our understanding of the influence of ambient temperature, freezing water conductivity and nature of applied voltage on the surface flashover of ice. Flashover tests were carried out using two metallic hemispherical capped rods 12 mm in diameter, separated by an ice surface. The distance between the
M Farzaneh, S.Y Li, K.D Srivastava
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The main objective of the present study is to further our understanding of the influence of ambient temperature, freezing water conductivity and nature of applied voltage on the surface flashover of ice. Flashover tests were carried out using two metallic hemispherical capped rods 12 mm in diameter, separated by an ice surface. The distance between the
M Farzaneh, S.Y Li, K.D Srivastava
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Surface flashover characteristics of semiconductor
Digest of Technical Papers. PPC-2003. 14th IEEE International Pulsed Power Conference (IEEE Cat. No.03CH37472), 2004Two kinds of silicon samples with distinct surface treatment, i.e., one surface was chemically etched and the other was unetched, were used to investigate the flashover characteristics of semiconductor under impulse voltage in vacuum. Before flashover, the ohmic current was observed for unetched samples and the space charge limited (SCL) current for ...
null Guan-Jun Zhang +2 more
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