Results 251 to 260 of about 4,367 (288)
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Modeling the Photovoltage of Doped Si Surfaces
The Journal of Physical Chemistry C, 2010Doped Si(111) surfaces have been modeled with a Si slab, and their photovoltage has been calculated with a combination of ab initio electronic structure and density matrix treatments from the steady state solution of the electronic density matrix (DM) for electrons interacting with thermalized lattice vibrations.
Dmitri S. Kilin, David A. Micha
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Highly sensitive immunosensor with a surface photovoltage technique
Applied Biochemistry and Biotechnology, 1993An ac surface photo voltage technique was successfully applied to construct a highly sensitive immuno-sensor by reducing the ion screening effect. A low noise amplification was attained by using a phase sensitive amplification technique, which made it possible to use low-ion density electrolyte leading to suppress the ion screening effect. The response
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Surface photovoltage spectroscopy of porous silicon
Physical Review B, 1997Results of surface photovoltage spectroscopy on free-standing porous silicon films fabricated from boron-doped Si wafers of various resistivities are presented. We find that all the films have bandtails, which are about 0.3 eV wide, and their optical band gap is about 2 eV.
L. Burstein +5 more
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Measurement of fast surface photovoltage relaxation
Review of Scientific Instruments, 1996A new version of the measuring circuit is presented which makes it possible to measure fast surface photovoltage relaxation in a simple way. An explanation of the experimental arrangement is given as well as illustrating the results.
J. Hlávka, R. S̆vehla
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On the theoretical basis of the surface photovoltage technique
IEEE Transactions on Electron Devices, 1985A complete theory for the constant-magnitude steady-state surface photovoltage (SPV) technique is developed. Emphasis is placed on the determination of the minority-carrier diffusion length. The theory is derived from the basic transport mechanisms in semiconductors with minimal assumptions.
null Ching-Lang Chiang, S. Wagner
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Preparation of surface photovoltage VOC detector
International Conference on Instrumentation, Communication, Information Technology, and Biomedical Engineering 2009, 2009We succesfully prepared the surface photovoltage sensor system using several types of modified mesoporous silica as a sensitive materials. The sensitive materials were fabricated using self-ordered and structure-controlled modified mesoporous thin films, which is synthesized by a molecule surfactant method using spin coating.
Brian Yuliarto +2 more
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Surface photovoltage studies of multilayered structures
Journal of Electroanalytical Chemistry, 2003Abstract Surface photovoltage (SPV) measurements were used to study InAs/GaAs multilayered structures. Two types of sample grown by molecular beam epitaxy were investigated: a quantum dot sample containing a fifteen-layer stack of InAs quantum dots (QD), each separated by GaAs layers, and a multi-quantum well sample.
C.F. de Souza, H.E. Ruda, S. Fafard
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Surface photovoltage in hydrogenated amorphous silicon
Applied Physics Letters, 1984By solving Poisson’s equation in dark and light, it is concluded that the observed surface photovoltage in hydrogenated amorphous silicon necessarily involves a transfer of charge between the surface states and the space-charge region, and does not directly give the band bending. Experimental evidence which supports this conclusion is presented.
Shailendra Kumar, S. C. Agarwal
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Surface photovoltage and photoelectron spectra of GaP
Solid State Communications, 2007Surface photovoltage (SPV) and photoelectron spectra (PES) of crystalline n-GaP wafers have been studied at 300 K. The magnitude of the surface potential (Vs) decreases in the presence of photons with energy more than the band gap, however the magnitude of Vs increases in the presence of photons with sub band gap energy.
Shailendra Kumar +3 more
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Surface photovoltage spectroscopy of thin films
Journal of Applied Physics, 1996The surface photovoltage (SPV) spectrum due to subband-gap illumination of thin films is theoretically studied. It is shown that this SPV is inherently sensitive to buried interfaces just as it is sensitive to the external semiconductor surface. The different contributions to the SPV from all the optically active gap states present within a sample ...
M. Leibovitch +5 more
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