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The effect of surface recombination on surface photovoltage in semiconductors

Journal of Applied Physics, 1991
A numerical method is used to evaluate the surface photovoltage (SPV) in semiconductors as a function of surface recombination velocity, photon flux, substrate doping level, and oxide charge. It is found that SPV is reduced by the surface recombination.
Xiumiao Zhang, Jiatao Song
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Distinction between surface and bulk states in surface-photovoltage spectroscopy

Physical Review B, 1994
The effect of localized electron states on the photovoltage at a free semiconductor surface is analyzed. The analysis shows that surface-photovoltage spectroscopy (SPS) is inherently more sensitive to surface states than to bulk states. Moreover, a fundamental difference between the effect of surface and bulk states on the surface photovoltage (SPV) is
, Leibovitch   +3 more
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A Study of the Surface Photovoltage of ZnO-Resin Layers

Applied Optics, 1969
The surface photovoltage of ZnO resin layer has been used as the basis for an imaging process generally known as chargeless electrophotography. This paper explores effects of the ambient air pressure and the layer temperature on the surface photovoltage of ZnO resin layers. Experiments were made by using ZnO-silicone resin layer, ZnO-alkyd resin layer,
I, Tashiro, T, Kimura, K, Endo
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Surface Photovoltage and Electric Field‐Induced Surface Photovoltage Study on a Series of Lanthanide (III) Monoporphyrin Compounds

Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry, 2007
The photoelectric properties of Meso‐tetra‐(p‐chlorophenyl)porphyrin‐hydroxy‐rare earth complexes Ln (P‐Cl) TPP (OH)·Im[H2(P‐Cl)TPP: (p‐chlorophenyl) porphyrin; Ln: Gd, Tb, Dy, Er, Yb, Lu; Im: imidazole] were studied with surface photovoltaic spectroscopy (SPS) and electric field induced surface photovoltaic spectroscopy (FISPS).
Miao Yu, Zheng Li, Guo Fa Liu
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The spectral dependence of the surface photovoltage in CdS

Journal of Physics D: Applied Physics, 1975
The photovoltage developed between the surface of a single crystal of photo-conducting CdS and a metal reference electrode has been measured as a function of wavelength and temperature. By comparing the photovoltage in the 1.3-1.6 mu m region with photocurrent measurements made under similar conditions it is shown that the same bulk states are involved
M A Channon   +3 more
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Surface Photovoltage Spectroscopy

1978
Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and experimental techniques are presented. As examples, recent experimental results on the electronic structure of ultrahigh vacuum (UHV) cleaved surfaces of Ge, Si and GaAs are briefly reviewed.
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Surface photovoltage behavior of GaN columns

physica status solidi (a), 2015
GaN columns are grown by metal organic vapor phase epitaxy (MOVPE) with a high silane flow, which often leads to rough sidewalls and related problems during a subsequent shell overgrowth by e.g., InGaN/GaN quantum wells. In order to get more information on the surface of GaN columns before overgrowth, surface photovoltage (SPV) measurements have been ...
Manal Ali Deeb   +4 more
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Characterization of Surface Cleans by Surface Photovoltage and Surface Charge Imaging

MRS Online Proceedings Library, 1993
To monitor the effectiveness of standard cleaning processes in semiconductor manufacturing, suitable diagnostic procedures must be found. In addition the procedures must be non-contact and non-destructive. Increasingly the techniques of surface photovoltage and surface charge imaging together are finding applications as in-line wafer monitors.
John Lowell   +2 more
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Preparation and Surface Photovoltage Characterization of Cu2O

Rare Metal Materials and Engineering, 2015
We have synthesized two types of Cu2O samples with size about 700 nm by a facile reduction route. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and surface photovoltage spectroscopy (SPS).
Xu Shuang   +5 more
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Theory of surface photovoltage in semiconductor films

Semiconductor Science and Technology, 1993
A general expression for open-circuit voltage due to a Schottky barrier at the surface of a semiconductor has been derived. Saturation effects have been included and the Dember potential has been added in the terminal voltage to show that n and p barriers on an intrinsic layer behave differently.
S R Dhariwal, B M Deoraj
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