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Dual-heterodyne Kelvin probe force microscopy [PDF]

open access: yesBeilstein Journal of Nanotechnology, 2023
We present a new open-loop implementation of Kelvin probe force microscopy (KPFM) that provides access to the Fourier spectrum of the time-periodic surface electrostatic potential generated under optical (or electrical) pumping with an atomic force ...
Benjamin Grévin   +3 more
doaj   +5 more sources

Visualization of π-hole in molecules by means of Kelvin probe force microscopy [PDF]

open access: yesNature Communications, 2023
Submolecular charge distribution significantly affects the physical-chemical properties of molecules and their mutual interaction. One example is the presence of a π-electron-deficient cavity in halogen-substituted polyaromatic hydrocarbon compounds, the
B. Mallada   +7 more
doaj   +5 more sources

High–low Kelvin probe force spectroscopy for measuring the interface state density [PDF]

open access: yesBeilstein Journal of Nanotechnology, 2023
The recently proposed high–low Kelvin probe force microscopy (KPFM) enables evaluation of the effects of semiconductor interface states with high spatial resolution using high and low AC bias frequencies compared with the cutoff frequency of the carrier ...
Ryo Izumi   +3 more
doaj   +2 more sources

Direct measurement of surface photovoltage by AC bias Kelvin probe force microscopy [PDF]

open access: yesBeilstein Journal of Nanotechnology, 2022
Surface photovoltage (SPV) measurements are a crucial way of investigating optoelectronic and photocatalytic semiconductors. The local SPV is generally measured consecutively by Kelvin probe force microscopy (KPFM) in darkness and under illumination, in ...
Masato Miyazaki   +2 more
doaj   +2 more sources

High resolution atomic force and Kelvin probe force microscopy image data of InAs(001) surface using frequency modulation method [PDF]

open access: yesData in Brief, 2020
This article provides data on the scanning tunnelling microscopy (STM), atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) images of InAs(001) surface.
Young Min Park   +3 more
doaj   +2 more sources

Artifacts in time-resolved Kelvin probe force microscopy [PDF]

open access: yesBeilstein Journal of Nanotechnology, 2018
Kelvin probe force microscopy (KPFM) has been used for the characterization of metals, insulators, and semiconducting materials on the nanometer scale. Especially in semiconductors, the charge dynamics are of high interest.
Sascha Sadewasser   +2 more
doaj   +2 more sources

High-speed mapping of surface charge dynamics using sparse scanning Kelvin probe force microscopy [PDF]

open access: yesNature Communications, 2023
Unraveling local dynamic charge processes is vital for progress in diverse fields, from microelectronics to energy storage. This relies on the ability to map charge carrier motion across multiple length- and timescales and understanding how these ...
Marti Checa   +14 more
doaj   +2 more sources

In situ microscopic investigation of ion migration on the surface of chromium coated steels

open access: yesnpj Materials Degradation, 2022
Cathodic spreading of electrolyte on two-layers chromium coatings electrodeposited from trivalent chromium electrolyte on steel was studied on the micro- and the macroscale. The behavior is discussed in view of results obtained on electrical conductivity
J. Manoj Prabhakar   +2 more
doaj   +1 more source

Single-Bilayer Graphene Test Structures for Kelvin Probe Microscopy

open access: yesC, 2023
A new technique for determining the point spread function, which is required for measuring the surface potential using Kelvin probe microscopy (KPM), is presented. The method involves using a silicon carbide substrate coated with single-layer and bilayer
Sergey P. Lebedev   +4 more
doaj   +1 more source

Modelling of Kelvin probe surface voltage and photovoltage in dielectric-semiconductor interfaces

open access: yesMaterials Research Express, 2022
The characterisation of dielectric-semiconductor interfaces via Kelvin probe surface voltage and photovoltage has become a widespread method of extracting the electrical properties influencing optoelectronic devices.
Ruy Sebastian Bonilla
doaj   +1 more source

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