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The relevance of Cr defects and photoelectrochemical water oxidation activity of monoclinic PbCrO<sub>4</sub> films. [PDF]
Li J +9 more
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In Situ Imaging Reveals Efficient Charge Separation in Monolayer MoS<sub>2</sub>-WS<sub>2</sub> Type-II Heterojunctions. [PDF]
Huang Q +9 more
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Interface-driven energy-independent charge extraction in GaN photocatalysts. [PDF]
Gao Y +8 more
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Highly Photosensitive Colloidal Quantum Well Based Nanocrystal Skins Assisted by Orientation Control. [PDF]
Isik F +5 more
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Surface photovoltage measurements in liquids
Review of Scientific Instruments, 1999We present a simple, compact, and robust arrangement for surface photovoltage measurements of free semiconductor surfaces immersed in liquids. It is based on the classical Kelvin probe arrangement, where the semiconductor sample is put in a liquid-containing, electrically insulating vessel, with an optically transparent window, situated between the ...
S. Bastide +3 more
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Surface photovoltage in CdMnTe
Solid-State Electronics, 1992Abstract Surface photovoltage method for determining minority carriers diffusion length has been applied to CdMnTe. It has been found that the method can yield reliable data for this parameter in CdMnTe but only under several conditions which have to be fulfilled during measurement. The main condition is to prepare the sample thick enough to obtain a
E. Płaczek-Popko, L. Szaro
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Physica Status Solidi (a), 1977
Surface photovoltage is measured as function of barrier height. The height of the barrier is varied by illumination and electric field in a wide range. From a comparison of theoretical and experimental results the concentration of surface states and their capture cross-sections for electrons and holes are determined.
I. Gabaš, J. Toušek
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Surface photovoltage is measured as function of barrier height. The height of the barrier is varied by illumination and electric field in a wide range. From a comparison of theoretical and experimental results the concentration of surface states and their capture cross-sections for electrons and holes are determined.
I. Gabaš, J. Toušek
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Surface photovoltage in a-Si:H
Journal of Non-Crystalline Solids, 1987Abstract The surface photovoltage (SPV) was measured as a function of temperature and light intensity for 2.0 eV and 2.5 eV photons for clean, oxidized and ligth soaked a-Si:H films. The undoped samples were transferred by a vacuum lock from the plasma deposition system to the analysis chamber and investigated by the kelvin technique.
M. Foller +3 more
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Surface photovoltage spectroscopy ‐ method and applications
physica status solidi c, 2010AbstractSurface photovoltage spectroscopy (SPS) allows for obtaining a detailed picture of the electronic structure of semiconductors. In SPS, changes in band bending at the free semiconductor surface are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties
CAVALCOLI, DANIELA, CAVALLINI, ANNA
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Surface photovoltage spectroscopy on semiconductor surfaces
Il Nuovo Cimento B Series 11, 1977Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and the experimental equipment are presented. As examples for the study of surface states, recent experimental results on ultrahigh-vacuum (UHV) cleaved surfaces of Ge, Si, GaAs and ZnO are ...
H. Lüth, G. Heiland
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