Results 201 to 210 of about 3,551 (254)

A generalized approach to surface photovoltage

Journal of Applied Physics, 1996
A detailed majority and minority carrier current balance model for surface photovoltage (SPV) is presented. A rigorous treatment of carrier junction generation and surface recombination is shown to be essential. We show that under weak above band gap photoexcitation, standard constant open-circuit voltage and constant photon flux SPV measurements can ...
Q. Liu, H. E. Ruda, G. M. Chen, M. Simard-Normandin   +3 more
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A study of the surface photovoltage of silicon

Solid-State Electronics, 1975
Abstract The surface photovoltage of silicon has been investigated for a variety of stable silicon surfaces with a view to determining to what extent it can be used to characterize the potential of the surface. It has been found that surface trapping of photogenerated carriers results in a photovoltage signal which cannot be interpreted by the ...
Joan R. Ewing, Lloyd P. Hunter
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Surface photovoltage spectroscopy of Cd0.85Mn0.15Te

physica status solidi (a), 1986
Surface photovoltage spectroscopy measurements are performed for Cd0.85.Mn0.15. Te single crystals with surface orientation (110) in the temperature range between 85 and 300 K at a pressure of 10−5 Pa. The linear dependence on temperature of the energy gap and the energy of the levels connected with manganese are stated and the temperature coefficients
S. Kuźmiński, A. T. Szaynok
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Oscillatory relaxation of surface photovoltage on a silicon surface

Physical Review B, 2013
Time-resolved measurement of photoemission spectroscopy was made to trace a change of surface potential after the surface photovoltage effect on a Si(111) $7\ifmmode\times\else\texttimes\fi{}7$ surface. Two relaxation processes were found with decay times of nanoseconds and hundreds of nanoseconds, which are explained in terms of the tunneling and the ...
M. Ogawa, S. Yamamoto, R. Yukawa, R. Hobara, C.-H. Lin, R.-Y. Liu, S.-J. Tang, I. Matsuda   +7 more
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The effect of surface recombination on surface photovoltage in semiconductors

Journal of Applied Physics, 1991
A numerical method is used to evaluate the surface photovoltage (SPV) in semiconductors as a function of surface recombination velocity, photon flux, substrate doping level, and oxide charge. It is found that SPV is reduced by the surface recombination.
Xiumiao Zhang, Jiatao Song
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Surface Photovoltage-Based Biosensor

2000
The surface photovoltage (SPV) technique was first applied to a chemical sensor by Hafeman et al. in 1988.1 We applied the technique to immunosensors in 19902 and also investigated possible applications to various kinds of chemical sensors, including ion sensors,3 gas sensors,4 biosensors,5 and image sensors.6 These studies demonstrated various ...
Yuji Murakami, Eiichi Tamiya, Hidekazu Uchida, Teruaki Katsube   +3 more
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Application of Surface Photovoltage Spectroscopy in Surface Analysis

MRS Proceedings, 1992
ABSTRACTExtension of the Kelvin probe vibrating capacitor technique of measuring work function, via Illumination of the semiconductor surface, i.e., Surface Photovoltage Spectroscopy (SPS), has many potential applications in the field of surface analysis.The combination of broad-band (white) and monochromatic radiation, together with measurement of the
Iain D. Baikie, Eimert Venderbosch, Birgitta Hall   +2 more
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Distinction between surface and bulk states in surface-photovoltage spectroscopy

Physical Review B, 1994
The effect of localized electron states on the photovoltage at a free semiconductor surface is analyzed. The analysis shows that surface-photovoltage spectroscopy (SPS) is inherently more sensitive to surface states than to bulk states. Moreover, a fundamental difference between the effect of surface and bulk states on the surface photovoltage (SPV) is
, Leibovitch, , Kronik, , Fefer, , Shapira   +3 more
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Surface Photovoltage Spectroscopy

1978
Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and experimental techniques are presented. As examples, recent experimental results on the electronic structure of ultrahigh vacuum (UHV) cleaved surfaces of Ge, Si and GaAs are briefly reviewed.
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Surface Photovoltage and Electric Field‐Induced Surface Photovoltage Study on a Series of Lanthanide (III) Monoporphyrin Compounds

Synthesis and Reactivity in Inorganic, Metal-Organic, and Nano-Metal Chemistry, 2007
The photoelectric properties of Meso‐tetra‐(p‐chlorophenyl)porphyrin‐hydroxy‐rare earth complexes Ln (P‐Cl) TPP (OH)·Im[H2(P‐Cl)TPP: (p‐chlorophenyl) porphyrin; Ln: Gd, Tb, Dy, Er, Yb, Lu; Im: imidazole] were studied with surface photovoltaic spectroscopy (SPS) and electric field induced surface photovoltaic spectroscopy (FISPS).
Miao Yu, Zheng Li, Guo Fa Liu
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