Results 191 to 200 of about 3,551 (254)

Surface Photovoltage Measurements in Liquids

Review of Scientific Instruments, 1999
We present a simple, compact, and robust arrangement for surface photovoltage measurements of free semiconductor surfaces immersed in liquids. It is based on the classical Kelvin probe arrangement, where the semiconductor sample is put in a liquid-containing, electrically insulating vessel, with an optically transparent window, situated between the ...
Leeor Kronik, David Cahen, Stéphane Bastide   +2 more
exaly   +2 more sources

Microscopic Surface Photovoltage Spectroscopy

Applied Physics Letters, 2002
We present a microscopic surface photovoltage spectroscopy method. It is based on a tunable illumination system combined with a kelvin probe force microscope, which measures the contact potential difference between a sample surface and a tip of an atomic force microscope.
Rafi Shikler, Y Rosenwaks
exaly   +2 more sources

Surface photovoltage in CdMnTe

Solid-State Electronics, 1992
Abstract Surface photovoltage method for determining minority carriers diffusion length has been applied to CdMnTe. It has been found that the method can yield reliable data for this parameter in CdMnTe but only under several conditions which have to be fulfilled during measurement. The main condition is to prepare the sample thick enough to obtain a
E. Płaczek-Popko, L. Szaro
openaire   +1 more source

Surface photovoltage on CdTe

Physica Status Solidi (a), 1977
Surface photovoltage is measured as function of barrier height. The height of the barrier is varied by illumination and electric field in a wide range. From a comparison of theoretical and experimental results the concentration of surface states and their capture cross-sections for electrons and holes are determined.
I. Gabaš, J. Toušek
openaire   +1 more source

Surface photovoltage in a-Si:H

Journal of Non-Crystalline Solids, 1987
Abstract The surface photovoltage (SPV) was measured as a function of temperature and light intensity for 2.0 eV and 2.5 eV photons for clean, oxidized and ligth soaked a-Si:H films. The undoped samples were transferred by a vacuum lock from the plasma deposition system to the analysis chamber and investigated by the kelvin technique.
M. Foller, J. Herion, W. Beyer, H. Wagner   +3 more
openaire   +1 more source

Surface photovoltage spectroscopy on semiconductor surfaces

Il Nuovo Cimento B Series 11, 1977
Surface photovoltage (SPV) spectroscopy is discussed with respect to its application for the investigation of semiconductor surfaces. Principles of the method and the experimental equipment are presented. As examples for the study of surface states, recent experimental results on ultrahigh-vacuum (UHV) cleaved surfaces of Ge, Si, GaAs and ZnO are ...
H. Lüth, G. Heiland
openaire   +1 more source

Surface photovoltage spectroscopy ‐ method and applications

physica status solidi c, 2010
AbstractSurface photovoltage spectroscopy (SPS) allows for obtaining a detailed picture of the electronic structure of semiconductors. In SPS, changes in band bending at the free semiconductor surface are monitored as a function of external illumination. Surface photovoltage spectroscopy can provide detailed, quantitative information on bulk properties
CAVALCOLI, DANIELA, CAVALLINI, ANNA
openaire   +2 more sources

Phonons in surface photovoltage of GaAs

Physics Letters A, 1974
Abstract Oscillatory surface photovoltage is reported in GaAs at 4.2°K, characterized by two series of minima. Dominating series is attributed to the capture of photoexcited electrons by surface states with emission of phonons. Second, weak series coincides with oscillations in photoconductivity.
A. Morawski, J. Łagowski
openaire   +1 more source

Limitations of surface photovoltage measurements

Journal of Applied Physics, 1984
Surface photovoltage measurement used to measure the diffusion length of minority carriers in solar cells does not yield the correct value even when the cell thickness is much greater than the diffusion length. Under the best conditions the measured diffusion length is at least 10% lower than the actual value.
Amal K. Ghosh, Joel I. Haberman, Tom Feng   +2 more
openaire   +1 more source

Near-field surface photovoltage

Applied Physics Letters, 2000
A phenomenon called near-field surface photovoltage is presented. It is based on inducing photovoltage only at a semiconductor space-charge region using near-field illumination. The photovoltage is obtained by measuring the contact potential difference between an optical near-field force sensor and a semiconductor surface under illumination.
R. Shikler, Y. Rosenwaks
openaire   +1 more source