Results 41 to 50 of about 647 (169)

Space Vector Pulse Width Modulation for High-Speed Induction Motor Implemented in Nios II Softcore Processor

open access: yesPower Electronics and Drives, 2018
The purpose of the article was to present the idea of space vector pulse width modulation (SVPWM) and implementation in Nios II softcore processor.
Chojowski Maciej
doaj   +1 more source

PWM Dead Times in Automotive Traction Inverters using IGBT, SiC MOSFET, or Si/SiC Fusion Switch Power Modules

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This article features a comprehensive methodology for analyzing and optimizing PWM dead time in automotive traction inverters, applicable to a wide range of power devices, including Si IGBT/Diodes, SiC MOSFETs, and Si/SiC Fusion switches. The proposed methodology enables a systematic comparison of dead time characteristics, focusing on part‐to‐part ...
Tomas Reiter   +4 more
wiley   +1 more source

Active Voltage Balancing Control of 9‐Level Multicell‐Based A‐NPC Inverters

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
We present a optimization‐free PWM control for single‐phase 9‐level FC A‐NPC inverters that converts measured current and capacitor voltages into logic equations to both balance FC voltages and generate the commanded levels. By removing objective functions/optimizers, it enables fast, simple implementation, with experiments showing robust performance ...
Kasra Amirsoleymani, Vahid Dargahi
wiley   +1 more source

Life Prediction of Power Devices of Train Traction Inverter Based on SVPWM Modulation

open access: yes机车电传动, 2021
Space vector pulse width modulation (SVPWM) can be divided into five-segment SVPWM and seven-segment SVPWM. In order to improve the reliability of the traction inverter, the junction temperature analysis and lifetime prediction of the key components of ...
Junhan YE   +5 more
doaj  

Power Converter's IGBT Multi‐State Reliability Analysis for Low Failure Rate Operation

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper proposes a multi‐state reliability analysis for IGBTs in power converters, moving beyond the conventional two‐stage model with a constant failure rate and introduces a multi‐state Markov chain model for voltage source converters under different modulation scenarios.
Qiaohan Su   +3 more
wiley   +1 more source

A predictive control method for switching sequence selection based on SVPWM for five‐level converter

open access: yesIET Power Electronics, 2023
Aiming at the problems of complex realization, single control target and difficulty in selecting the optimal zero sequence voltage when the traditional space vector PWM (SVPWM) algorithm is adopted in five‐level active neutral‐point‐clamp (5L‐ANPC ...
Zhan Liu   +4 more
doaj   +1 more source

Varied Switching Frequency PWM Method for Adjustable Maximum Output Voltage High‐Speed IPMSM Drive Systems

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
This paper investigates the comparisons of high‐speed flux‐weakening control using two different overmodulation PWM methods: a fixed switching frequency over‐modulation PWM and a variable frequency over‐modulation PWM. Experimental results show that the variable frequency over‐modulation PWM can obtain better performance.
Tian‐Hua Liu   +2 more
wiley   +1 more source

Neural Network based Direct Torque Controller of SRM for EV Application [PDF]

open access: yesE3S Web of Conferences
the control aspects of the elecytric vehicle are presented in this paper. The electric car which is driven by a 6/4 Switched Reluctance Motor (SRM) powered by four battery banks is presented in this paper.
D Ganesh   +3 more
doaj   +1 more source

Research on the Simplified SVPWM for Three-Phase/Switches Y-Type Two-Level Rectifier

open access: yesIEEE Access, 2020
The three-phase/switch Y-type two-level rectifier is widely used in the unidirectional power-flowing applications such as LED illumination, communication and uninterruptible power supply.
Hui Ma   +3 more
doaj   +1 more source

Online Detection of SiC MOSFET Gate Oxide Degradation by Drain‐Source Voltage Surge in Inverter

open access: yesIET Power Electronics, Volume 19, Issue 1, January/December 2026.
The peak extraction circuit shown in Figure 7 converts the MOSFET's di/dt into a voltage, thereby characterising the health status of the MOSFET's gate oxide layer. ABSTRACT Gate oxide layer degradation has become one of the key issues in the reliability of SiC MOSFETs, which seriously restricts the broad application of SiC MOSFETs.
Tianyang Wang   +5 more
wiley   +1 more source

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