Results 251 to 260 of about 6,600,824 (345)

Datasheet Driven Switching Loss, Turn-ON/OFF Overvoltage, di/dt, and dv/dt Prediction Method for SiC MOSFET

IEEE transactions on power electronics, 2022
This article presents quick analytical prediction methods of switching loss, turn-on/off overvoltage, di/dt, and dv/dt for SiC metal–oxide–semiconductor field-effect transistor based on device datasheet.
Chengjin Qian, Zhiqiang Wang, Guoqing Xin, Xiaojie Shi   +3 more
semanticscholar   +1 more source

A Carrier-Based Discontinuous PWM Strategy for T-Type Three-Level Converter With Reduced Common Mode Voltage, Switching Loss, and Neutral Point Voltage Control

IEEE transactions on power electronics, 2022
A novel carrier-based discontinuous pulsewidth modulation (CB_DPWM) strategy for T-type three-level converter is proposed in this article. Because one significant advantage of the proposed CB_DPWM is the reduction of common mode voltage (CMV), it is ...
Weidong Jiang, Haoran Jiang, Shen-Tuan Liu, Shengzhi Ji, Jinping Wang   +4 more
semanticscholar   +1 more source

Inaccurate Switching Loss Measurement of SiC MOSFET Caused by Probes: Modelization, Characterization, and Validation

IEEE Transactions on Instrumentation and Measurement, 2021
SiC metal–oxide–semiconductor field-effect transistor (MOSFET) has a fast switching speed and high slew rate. However, its ultrashort switching time approximates the rise time and propagation delay of the measurement instruments, which results in an ...
Zheng Zeng, Jin Wang, Liang Wang, Yue Yu, Kaihong Ou   +4 more
semanticscholar   +1 more source

Self-Adapted Model Predictive Current Control for Five-Phase Open-End Winding PMSM With Reduced Switching Loss

IEEE transactions on power electronics, 2022
This article proposed a self-adapted model predictive current control (SA-MPCC) method to reduce the switching loss of the five-phase open-end winding permanent-magnet synchronous motor (OW-PMSM).
Yuxuan Du, J. Ji, Wenxiang Zhao, T. Tao, Dezhi Xu   +4 more
semanticscholar   +1 more source

Dynamic dv/dt Control Strategy of SiC MOSFET for Switching Loss Reduction in the Operational Power Range

IEEE transactions on power electronics, 2022
For silicon carbide power mosfets, high dv/dt in switching may bring about a high level of electromagnetic interference. This letter shows that the dv/dt rate decreases at lower load currents.
Zebing Wu, Huaping Jiang, Zhenhong Zheng, Xiaowei Qi, H. Mao, Li Liu, L. Ran   +6 more
semanticscholar   +1 more source

A Generalized Scheme With Linear Power Balance and Uniform Switching Loss for Asymmetric Cascaded H-Bridge Multilevel Inverters

IEEE transactions on power electronics, 2022
Under the traditional hybrid modulation strategy, the output voltage of 2:1:1 asymmetric cascaded H-bridge multilevel inverter is proved to be of high quality.
M. Ye, Ruifan Peng, Ziwei Tong, Zihao Chen, Zhilin Miao   +4 more
semanticscholar   +1 more source

Partial-Bootstrap Gate Driver for Switching Loss Reduction and Crosstalk Mitigation

IEEE transactions on power electronics, 2022
This letter presents a partial-bootstrap gate driver circuit for switching loss reduction and crosstalk mitigation. The proposed circuit is simple and no additional power supply or control is needed.
Chengjin Qian, Zhiqiang Wang, Guoqing Xin, Xiaojie Shi   +3 more
semanticscholar   +1 more source

Temperature-Dependent Reverse Recovery Characterization of SiC MOSFETs Body Diode for Switching Loss Estimation in a Half-Bridge

IEEE transactions on power electronics, 2021
In a hard switched mosfet based converter, turn-on energy losses is predominant in the total switching loss. At higher junction temperature the turn-on energy loss further increases due to the reverse recovery effect of the complementary mosfets body ...
Debiprasad Nayak, Ravi Kumar Yakala, Manish Kumar, S. Pramanick   +3 more
semanticscholar   +1 more source

Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism

IEEE Transactions on Electron Devices, 2021
In this article, a dynamic charge storage mechanism is proposed for designing the p-GaN gate dynamic charge storage high-electron-mobility transistor (DCS-HEMT) with ultralow switching loss. The device features a p-doped DCS layer in AlGaN buffer.
Fangzhou Wang, Wanjun Chen, Xiaorui Xu, Ruize Sun, Zeheng Wang, Yun Xia, Yajie Xin, Chao Liu, Qi Zhou, Bo Zhang   +9 more
semanticscholar   +1 more source

A Postprocessing-Technique-Based Switching Loss Estimation Method for GaN Devices

IEEE transactions on power electronics, 2021
Gallium nitride (GaN) high electron mobility transistor (HEMT) is a promising candidate for the high-density power converter applications. Due to the low switching loss, the GaN HEMT may lead to a new horizon in the applications, such as fast charger ...
Minghai Dong, Hui Li, S. Yin, Yingzhe Wu, K. See   +4 more
semanticscholar   +1 more source