Results 301 to 310 of about 6,600,824 (345)

Impact of Termination Region on Switching Loss for SiC MOSFET

IEEE Transactions on Electron Devices, 2019
Due to outstanding properties of silicon carbide (SiC) and unipolar current conduction mechanism, the active chip size of SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is significantly shrunk, which significantly improves switching ...
Xuan Li, B. Tan, A. Huang, Bo Zhang, Yumeng Zhang, Xiaochuan Deng, Zhaoji Li, X. She, Fangzhou Wang, Xing Huang   +9 more
semanticscholar   +1 more source

Determination of switching losses in IGBTs by loss-summation-method

IAS '95. Conference Record of the 1995 IEEE Industry Applications Conference Thirtieth IAS Annual Meeting, 2002
The exact determination of switching losses in power transistors is still an important problem. This paper treats investigations on switching losses in insulated gate bipolar transistors and assigned freewheeling diodes at hard switching commutation. Especially, a new technique, the loss summation method, is presented.
L. Abraham, M. Reddig
openaire   +1 more source

Investigation of Aging’s Effect on the Conduction and Switching Loss in SiC MOSFETs

European Conference on Cognitive Ergonomics, 2019
The long-term device and package degradations in SiC MOSFETs can affect the power converter’s performance. In this paper, the aging’s effect on the device’s conduction and switching loss is evaluated experimentally. A DC power cycling test is implemented
Fei Yang, Enes Ugur, S. Pu, B. Akin, M. Das   +4 more
semanticscholar   +1 more source

An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

IEEE Transactions on Electron Devices, 2019
In this paper, an improved 4H-SiC U-shaped trench-gate metal–oxide–semiconductor field-effect transistors (UMOSFETs) structure with low ON-resistance ( ${R}_{ \mathrm{\scriptscriptstyle ON}}$ ) and switching energy loss is proposed.
Kai Tian, A. Hallén, Jinwei Qi, Shenhui Ma, Xin-xing Fei, Anping Zhang, Weihua Liu   +6 more
semanticscholar   +1 more source

Switching losses of IGBTs under zero-voltage and zero-current switching

PESC Record. 27th Annual IEEE Power Electronics Specialists Conference, 2002
Turn-off switching losses of punch-through (PT) and nonpunch-through (NPT) IGBTs under hard switching (HS) and zero-voltage switching (ZVS) are presented and evaluated at 25/spl deg/C, 75/spl deg/C and 125/spl deg/C. A comparison between PT and NPT devices based on their internal device characteristics is given for HS and ZVS.
A. Elasser, M.J. Schutten, V. Vlatkovic, D.A. Torrey, M.H. Kheraluwala   +4 more
openaire   +1 more source

Loss analysis in soft switching boost converter using a single switch

2009 IEEE 6th International Power Electronics and Motion Control Conference, 2009
In this paper, we presents a loss analysis in soft switching boost converter using a single switch. The proposed paper shows a measurement of efficiency according to the optimal design. Also, we made a linearized equivalent circuit for analyzing the loss of switch and diodes.
null Doo-Yong Jung, null Young-Hyok Ji, null Chung-Yuen Won, null Su-Won Lee, null Yong-Chae Jung   +4 more
openaire   +1 more source

Switching Loss Model of SiC MOSFET Promoting High Frequency Applications

International Symposium on Power Semiconductor Devices and IC's, 2019
In this work, the influence of parasitic capacitance on the switching loss of SiC MOSFET is investigated. The switching loss models considering $\boldsymbol{C}_{\mathbf{gd}}$ and $\boldsymbol{C}_{\mathbf{ds}}$ are obtained.
Xuan Li, Xu Li, Liping Yang, A. Huang, Pengkun Liu, Xiaochuan Deng, Bo Zhang   +6 more
semanticscholar   +1 more source

Switching Loss Characterization of GaN-based Buck Converter under Different Substrate Biases

IEEE Workshop on Wide Bandgap Power Devices and Applications, 2019
Switching loss of GaN-based synchronous buck converter under different substrate biases are characterized and analyzed by experiment. Switching loss of high side GaN power device increases with positive substrate bias but decreases with increasing ...
Md Safayatullah, Wen Yang, Jiann-Shiun Yuan, Balakrishnan Krishnan   +3 more
semanticscholar   +1 more source

Improved three switch-active clamp forward converter with low switching loss

2017 IEEE 3rd International Future Energy Electronics Conference and ECCE Asia (IFEEC 2017 - ECCE Asia), 2017
The improved three switch-active clamp forward (3S-ACF) converter is proposed in this paper. The proposed converter has minimized switching loss on all switches of 3S-ACF converter by simple change of gate control scheme without any additional components. In addition, current stress of clamp diode can be significantly reduced.
Chong-Eun Kim, Jae-Bum Lee, Jae-Il Baek, Han-Shin Youn, Gun-Woo Moon   +4 more
openaire   +1 more source

Quantized stabilization of switched systems with switching delays and packet loss

Journal of the Franklin Institute, 2018
zbMATH Open Web Interface contents unavailable due to conflicting licenses.
Jingjing Yan, Yuanqing Xia, Chenglin Wen
openaire   +1 more source