Results 211 to 220 of about 352,422 (329)

Ultra‐Low Operating Voltage Memristors Based on Plating/Stripping Reactions

Advanced Science, EarlyView.
A plating/stripping memristor exhibits mV‐level redox switching, high endurance, and ultralow‐voltage operation. The system supports gradual conductance evolution and enables 4‐bit pulse‐coded reservoir computing, offering a physically interpretable platform for neuromorphic processing based on interfacial electrochemical kinetics.
Lingbo Yao, Zhurui Wang, Yanyu Sun, Xiaowei Chi, Yu Liu   +4 more
wiley   +1 more source

Study on the anti-interference characteristics of neuronal networks: a comparative study of chemical synapses and electrical synapse. [PDF]

Front Neurosci
Li X, Lu M.
europepmc   +1 more source

Suppression of foreign synapses [PDF]

, 1976
Jeremy P. Brockes
openalex   +1 more source

Synaptic Function in Memristor Devices for Neuromorphic Circuit Applications

Advanced Electronic Materials, EarlyView.
Discover how neuromorphic devices mimic brain‐like learning: this article explores how ionic and electronic conduction processes enable artificial synapses to adapt across time scales. Uncover the essential ingredients—state‐variable dynamics, rectification, and memory—and how they can be probed through nonlinear diagnostics to engineer smarter, more ...
Juan Bisquert, Wooyoung Shim, So‐Yeon Kim, Bernabe Linares‐Barranco   +3 more
wiley   +1 more source

Taking the tube to the basal pole of hair cells. [PDF]

Elife
Ghimire SR, Coate TM.
europepmc   +1 more source

The formation of synapses in reinnervated and cross‐reinnervated striated muscle during development

, 1974
Max R. Bennett, A. G. Pettigrew
openalex   +2 more sources

Nerve, synapse and muscle [PDF]

, 1977
P. F. Baker
openalex   +1 more source

Research on Resistive Switching Mechanism of SnO2/SnS2 Based Heterojunction Memory Devices

Advanced Electronic Materials, EarlyView.
This work fabricates SnO2/SnS2 RRAM using (NH4)4Sn2S6, achieving 224 pJ set energy at 0.4 V with >1000‐cycle stability and 4 × 104 s retention. XPS/SEM/AFM‐validated interfacial engineering enables uniform switching, advancing low‐power neuromorphic memory development.
WenBin Liu, Lifang Hu, RuoXuan Zhao, ZhiYong Hou, JinYu Tian   +4 more
wiley   +1 more source

FGF13 prevents age-related hearing loss by protecting spiral ganglion neurons and ribbon synapses from injury. [PDF]

Cell Death Discov
Yin H, Cao H, Yang J, Liu T, Li Q, Liu M, Wang B.   +6 more
europepmc   +1 more source

Science of Synapses [PDF]

, 1973
B. B. Boycott
openalex   +1 more source