Results 171 to 180 of about 1,301 (201)

Amorphous Gallium‐Oxide‐Based Non‐Filamentary Memristive Device with Highly Repeatable Multiple Resistance States

Advanced Electronic Materials, EarlyView.
A fully back‐end‐of‐line (BEOL) compatible memristive device is proposed using an amorphous gallium oxide (a‐GaOx) film grown by plasma‐enhanced atomic layer deposition. Bipolar resistive analog switching is achieved without requiring forming and with a self‐rectifying behavior.
Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu   +6 more
wiley   +1 more source

The F-Box Protein ZYGO1 Mediates Bouquet Formation to Promote Homologous Pairing, Synapsis, and Recombination in Rice Meiosis [PDF]

, 2017
Fanfan Zhang, Ding Tang, Yi Shen, Zhihui Xue, Wenqing Shi, Lijun Ren, Guijie Du, Yafei Li, Zhukuan Cheng   +8 more
openalex   +1 more source

Harnessing Earth‐Abundant Lead‐Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
In this study, a novel 1D lead‐free metal halide, K2CuBr3, composed of earth‐abundant elements, is introduced for resistive switching and artificial synapse devices. With exceptionally low production costs and minimal environmental impact, K2CuBr3 can be a promising candidate for sustainable memory storage and neuromorphic computing.
Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun‐Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu   +14 more
wiley   +1 more source

The Link between Recombination Initiation, Pairing and Synapsis in S. cerevisiae [PDF]

, 2018
Lina S. Yisehak
openalex   +1 more source

Emulation of Synaptic Plasticity in WO3‐Based Ion‐Gated Transistors

Advanced Electronic Materials, EarlyView.
This study investigates the synaptic plasticity of WO3‐based IGTs for neuromorphic computing. It examines the impact of ionic gating media, i.e., [EMIM][TFSI] and ‎LiTFSI in [EMIM][TFSI], on the nanoscale structure of electrical double layers and IGT response times and plasticity.
Ramin Karimi Azari, Luan Pereira Camargo, José Ramón Herrera Garza, Liam Collins, Wan− Yu Tsai, Lariel Chagas da Silva Neres, Patrick Dang, Martin Schwellberger Barbosa, Clara Santato   +8 more
wiley   +1 more source

Analysis of meiosis in Pristionchus pacificus reveals plasticity in homolog pairing and synapsis in the nematode lineage [PDF]

, 2019
Regina Rillo-Bohn, Renzo Sebastián Adilardi, Therese Mitros, Barış Avşaroğlu, Lewis Stevens, Simone Köhler, Joshua J. Bayes, Clara Wang, Sabrina Lin, K Alienor Baskevitch, Daniel S. Rokhsar, Abby F. Dernburg   +11 more
openalex   +1 more source

Digital‐Analog Integrated Optoelectronic Memristor Based on Carbon Dot for Ternary Opto‐Electronic Logic and Sen‐Memory Applications

Advanced Electronic Materials, EarlyView.
Herein, the development of a protective face mask based on a hierarchically porous cerium metal‐organic framework intensifying the bacterial entrapment ability and catalytic ROS generation at ambient condition is presented. It presents almost 100% antimicrobial efficacies for different bacteria even though in insufficient light (e.g.
Jiaqi Xu, Xiaoning Zhao, Dan Xie, Ya Lin, Zhongqiang Wang, Zhuangzhuang Li, Haiyang Xu, Yichun Liu   +7 more
wiley   +1 more source

Faculty Opinions recommendation of S-S synapsis during class switch recombination is promoted by distantly located transcriptional elements and activation-induced deaminase.

, 2007
Janet Stavnezer
openalex   +1 more source

Overcoming Endurance Limitations in Organic Nonvolatile Memories Through N‐Type Small‐Molecule Semiconductor Implementation and Thermal Optimization

Advanced Electronic Materials, EarlyView.
The defects in the charge‐trapping layer are believed to be responsible for endurance degradation in organic transistor nonvolatile memory (ONVM). The ONVM employing thermally treated n‐type semiconductor as the charge‐storage layer can maintain prolonged stable endurance for up to 104 cycles through annealing the charge‐trapping layer, paving the way ...
Zhenliang Liu, Shuyi Hou, Yiru Wang, Zeya Li, Hangyu Lei, Jiang Yin, Xu Gao, Yidong Xia, Zhiguo Liu   +8 more
wiley   +1 more source

Noise Spectroscopy and Electrical Transport In NbO2 Memristors with Dual Resistive Switching

Advanced Electronic Materials, EarlyView.
Electrical properties of NbO2‐based memristors are studied and the ability to engineer them for computing applications is explored. By employing noise spectroscopy and by utilizing a dimerization model of insulators, negative differential resistance and inhomogeneous conduction regions are explained.
Nitin Kumar, Jong E. Han, Karsten Beckmann, Nathaniel Cady, G. Sambandamurthy   +4 more
wiley   +1 more source