Results 121 to 130 of about 85,686 (325)

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

open access: yesAdvanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho   +3 more
wiley   +1 more source

Benchmark of Ferroelectric Transistor-Based Hybrid Precision Synapse for Neural Network Accelerator

open access: yesIEEE Journal on Exploratory Solid-State Computational Devices and Circuits, 2019
In-memory computing with analog nonvolatile memories can accelerate the in situ training of deep neural networks. Recently, we proposed a synaptic cell of a ferroelectric transistor (FeFET) with two CMOS transistors (2T1F) that exploit the hybrid ...
Yandong Luo   +4 more
doaj   +1 more source

Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm. [PDF]

open access: yesAdv Sci (Weinh), 2023
Won J   +18 more
europepmc   +1 more source

Monolithic Integration and Ferroelectric Phase Evolution of Hafnium Zirconium Oxide in 2d Neuromorphic Synaptic Devices

open access: green, 2023
Wendy L. Sarney   +9 more
openalex   +1 more source

Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks [PDF]

open access: bronze, 2021
Soeun Jin   +7 more
openalex   +1 more source

Field‐Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α‐In2Se3

open access: yesAdvanced Materials, EarlyView.
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid   +6 more
wiley   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

open access: yesAdvanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj   +8 more
wiley   +1 more source

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