Amorphous BN-Based Synaptic Device with High Performance in Neuromorphic Computing. [PDF]
Pyo J +5 more
europepmc +1 more source
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho +3 more
wiley +1 more source
Benchmark of Ferroelectric Transistor-Based Hybrid Precision Synapse for Neural Network Accelerator
In-memory computing with analog nonvolatile memories can accelerate the in situ training of deep neural networks. Recently, we proposed a synaptic cell of a ferroelectric transistor (FeFET) with two CMOS transistors (2T1F) that exploit the hybrid ...
Yandong Luo +4 more
doaj +1 more source
Device-Algorithm Co-Optimization for an On-Chip Trainable Capacitor-Based Synaptic Device with IGZO TFT and Retention-Centric Tiki-Taka Algorithm. [PDF]
Won J +18 more
europepmc +1 more source
Facile Approach for Improving Synaptic Modulation of Analog Resistive Characteristics by Embedding Oxygen Vacancies‐Rich Sub‐TaOx in Pt/Ta2O5/Ti Device Stacks [PDF]
Soeun Jin +7 more
openalex +1 more source
This study utilizes the van der Waals stacking of ferroelectric α$\alpha$‐In2Se3 to fabricate in‐plane artificial charged domain walls. These charged domain walls are electrically accessible, gate‐tunable, and show 2–9 orders of magnitude higher conductance than charged domain walls from thin film ferroelectrics, allowing their integration in field ...
Shahriar Muhammad Nahid +6 more
wiley +1 more source
Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices [PDF]
Dheemahi Rao, Bivas Saha
openalex +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Zinc oxide and indium-gallium-zinc-oxide bi-layer synaptic device with highly linear long-term potentiation and depression characteristics. [PDF]
Choi HW +6 more
europepmc +1 more source

