Results 231 to 240 of about 85,686 (325)

High-performance solar-blind optoelectronic synaptic device based on N-doped Ga2O3 nanowire network for neuromorphic computing [PDF]

Fan Wu, Xuehua Zhang, Kai Chen, Jinsong Liu, Chenhui Niu, Haizheng Hu, Shunli Wang   +6 more
openalex   +1 more source

Physical Implementation of Optical Material‐Based Neural Networks Processing Enabled by Long‐Persistent Luminescence

Advanced Science, EarlyView.
This study reports on the physical implementation of optical material‐based neural processing using long‐persistent luminescence as memory‐retention and nonlinear optical material. The system performs optical‐domain preprocessing with opto‐electronic interfaces for stimulus delivery and readout, enabling real‐time demonstrations including Pong gameplay
Sangwon Wi, Yunsang Lee
wiley   +1 more source

Spin-Orbit Torque-Driven Perpendicular Magnetization Switching for Artificial Synapses in Co/Ho Multilayer Systems. [PDF]

Nanomaterials (Basel)
Li S, Wei Y, Chen Y, Qu K, Yu P, Jiang Y.   +5 more
europepmc   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Water-Assisted Exfoliation of HfO₂-Based Membrane for Flexible Robust Ferroelectric Synaptic Transistors. [PDF]

Adv Sci (Weinh)
Zhang H, Zeng M, Chen J, Wang L, Jiang S, Cao Q, Li X, Hou Z, Shen C, Gan Y, Fang N, Liao Z, Zhou Z, Hao L.   +13 more
europepmc   +1 more source

The role of polyelectrolyte brushes in tunable synaptic devices [PDF]

Esli Diepenbroek, Leon A.; id_orcid 0000-0003-4176-8801 Smook, Sissi; id_orcid 0000-0002-7208-6814 de Beer   +2 more
openalex  

Model‐Inversion‐Resistant Physical Unclonable Neural Network Using Vertical NAND Flash Memory

Advanced Science, EarlyView.
Schematic and key features of the proposed forward‐forward physical unclonable neural network (FF‐PUNN), incorporating a concealable physical unclonable function (PUF) layer and forward‐forward (FF) learning. ABSTRACT The growing use of neural networks in privacy‐sensitive applications necessitates architectures that inherently protect both data and ...
Sung‐Ho Park, Ryun‐Han Koo, Jonghyun Ko, Jiseong Im, Yeongheon Yang, Mingyun Oh, Dongbeen Shin, Gyuweon Jung, Jong‐Ho Lee   +8 more
wiley   +1 more source

Memristor Synapse-A Device-Level Critical Review. [PDF]

Nanomaterials (Basel)
Chandrasekaran S, Chang YF, Simanjuntak FM.   +2 more
europepmc   +1 more source

Optoelectronic‐Driven van der Waals Ferroelectric Materials‐Based Memory Devices for Retinomorphic and In‐Sensory Hardware

Advanced Science, EarlyView.
2D ferroelectrics materials enabling non‐volatile polarization memory, optical excitability, and neuromorphic processing within a unified material and provides a mechanistic analysis of polarization‐induced band modulation, including photon‐assisted domain reorientation, switching kinetics, and interfacial dipole coupling that governs resistive ...
Parthasarathi Pal, Yeong‐Her Wang, Sanjay Kumar, Themis Prodromakis   +3 more
wiley   +1 more source

Stack-Engineered Mode Selection in PtMn/(Co/Pd)_n Multilayers Enables Deterministic Analog Spin-Orbit Torque Synapses. [PDF]

ACS Appl Mater Interfaces
Ranjan A, Farooq T, Chi CC, Wang CC, Lin YL, Salinas Padilla RI, Li YH, Tseng YC, Lee CH, Lu MY, Mishra R, Lai CH.   +11 more
europepmc   +1 more source